(1) 具高能量效率應用之鐵電場效電晶體元件、電路及記憶體之分析與設計。
(2) 研究前瞻奈米電子元件,包含高載子遷移率通道元件及二維材料元件等,分析其本質變異度及可靠度,研究前瞻奈米電子元件與其電路之共同最佳化。
(3) 高效能及超低功耗之靜態隨機存取記憶體設計,包含研究前瞻元件讀取寫入輔助電路及感測放大器。
(4) 積層型三維積體電路及系統技術共同最佳化。
(1) Ferroelectric FET and memory circuits for energy-efficient edge computing applications
- FeFET nonvolatile memory for in-memory computing and neuromorphic applications
(2) Analysis of Silicon, Ge, III-V, and 2D materials based nano-electronics, including the variability and reliability analysis of UTB FET, FinFET, nanowire/nanosheet FETs, TFET, and NCFET etc.
(3) Low power and high performance SRAM design
- Variability-tolerant and reliability-tolerant design
- Read-/write-assist circuits and sense amplifiers
(4) Monolithic 3D IC and system-technology co-optimization