林浩雄教授的著作列表 - Publication List of Hao-Hsiung Lin

Publication List of 林浩雄 Hao-Hsiung Lin

Journal articles & book chapters:

  1. Y. C. Wei, C. H. Chu, M. H. Mao, Y. R. Lin, and H. H. Lin, “A new method for direct extraction of ambipolar diffusion length in a thin film by scanning photoluminescence microscopy,” Jpn. J. Appl. Phys, Jan. 2024
  2. D. N. Talwar, and H. H. Lin, “Negative thermal expansion coefficient of Al pnictides – A systematic realistic pressure-dependent lattice dynamical study,” Materials Science and Engineering: B, 2024
  3. D. N. Talwar, and H. H. Lin, “Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy,” Applied Surface Science, Nov. 2023
  4. C. H. Wu, C. Chou, and H. H. Lin, “Strain and atomic stacking of bismuth thin film in its quasi-van der Waals epitaxy on (111) Si substrate,” Scientific Reports, Nov. 2023
  5. D. N. Talwar, T. R. Yang, and H. H. Lin, “Phonon characteristics of gas-source molecular beam epitaxy-grown InAs1-xNx/InP (001) with identification of Si, Mg and C impurities in InAs and InN,” Crystals, Oct. 2023
  6. D. N. Talwar, and H. H. Lin, “Systematic assessment of phonon and optical characteristics for gas-source molecular beam epitaxy-grown InP1-xSbx/n-InAs epifilms,” Crystals, Sept. 2023
  7. H. H. Lin, B. Xin, Z. C. Feng and I. T. Ferguson, “Cubic SiC grown on 4H SiC: Growth and structural properties.,” In Z. C. Feng (Ed.) Handbook of silicon carbide materials and devices, May 2023
  8. Y. C. Chen, R.H. Yan, H. C. Huang, L. H. Nieh, H. H. Lin, “Guard ring design to prevent edge breakdown in double-diffused planar InGaAs/InP avalanche photodiodes,” Materials, Feb. 2023
  9. Z. C. Feng, H. H. Lin, B. Xin, S. J. Tsai, V. Saravade, J. Yiin, B. Klein, I. T. Ferguson,, “Structural characteristics of 3C-SiC thin films grown on Si-face and C-face 4H-SiC substrates by high temperature chemical vapor deposition,” Vaccum, 2023
  10. Z. C. Feng, D. Xie, M. T. Nafisa, H. H. Lin, W. Lu, J. M. Chen, J. Yin, K. H. Chen, L. C. Chen, B. Klein, and I. T. Ferguson, “Optical surface and structural studies of InN thin films grown on sapphire by molecular beam epitaxy.,” J. Vac. Sci. Technol., 2023
  11. D. N. Talwar, and H. H. Lin, “Assessing site selectivity of Si-Ge in GaAs by isotopic dependent vibrational mode,” Mat. Sci. Eng. B, May 2022
  12. D. N. Talwar, and H. H. Lin, “Assessing thermodynamical properties of Al1-xGaxSb alloys and optical modes for Al1-xGaxSb/GaAs epifilms and (AlSb)m/GaSb)n superlattices,” J. Vac. Sci. Technol. A, May 2022
  13. C. Chou, B. X Wu, and H. H. Lin, “Structural properties of Bi thin film grown on Si (111) by quasi-van der Waals epitaxy,” Scientific Reports, 2022
  14. D. N. Talwar, P. Becla, H. H. Lin, and Z. C. Feng, “Assessment of intrinsic and doped defects in Bridgman growth Cd1-xZnxTe alloys,” Mat. Sci. Eng. B, 2021
  15. W. C. Hou, P. C. Shih, H. H. Lin, B. Wu, J. Y. Li, “High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls,” IEEE Trans. Electron Devices, 2021
  16. L. C. Hong, C. Chou, and H. H. Lin, “Simulation on the electric field effect of Bi thin-film,” Solid State Electronics Letter, 2020
  17. C. H. Chu, M. H. Mao, Y. R. Lin, and H. H. Lin, “A new fitting method for ambipolar diffusion length extraction in thin film structures using photoluminescence measurement with scanning excitation,” Scientific Reports, 2020
  18. D. N. Talwar, H. H. Lin, and Z. C. Feng, “Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers,” Mat. Sci. Eng. B, 2020
  19. H. P. Hsu, J. D. Wu, Y. J. Lin, Y. S. Huang, Y. R. Lin, and H. H. Lin, “Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques,” Jpn J. Appl. Physics, 54, 091201, 2015
  20. Y. C. Lin, M. H. Mao, C. J. Wu, and H. H. Lin, “InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm,” Optics lett., 40, 1904-1907, 2015
  21. H. P. Hsu, P. H. Wu, J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. H. Lin, and K. K. Tiong, “Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy,” Jpn J. Appl. Physics, 53, 051201, 2014
  22. H. M. Wu, S. J. Tsai, Y. C. Chang, Y. R. Chen, and H. H. Lin, “Ordering InGaP epilayer grown on Ge substrate,” Thin Solid Films, 570, 390-393, 2014
  23. Y. C. Lin, M. H. Mao, Y. R. Lin, H. H. Lin, C. A. Lin, and L. A. Wang, “All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling,” Optics lett., 39, 4998-5001, 2014
  24. K. I. Lin, K. L. Lin, B. W. Wang, H. H. Lin, and J. S. Huang, “Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation,” Appl. Phys. Express, vol. 6, p. 121202, Dec. 2013
  25. J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. S. Tsai, and H. H. Lin, “Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure,” J. Luminescence, vol. 136, pp. 178-181, Apr. 2013
  26. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy,” J. Physics D, vol. 46, p. 035306, Jan. 2013
  27. D. N. Talwar, T. R. Yang, H. H. Lin, and Z. C. Feng, “Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001),” Appl. Phys. Lett., vol. 102, p. 052110, Jan. 2013
  28. H. H. Lin, C. L. Chiou, Y. T. Lin, T. C. Ma, J. S. Wu, and Z. C. Feng, “Short range structure of dilute nitride GaAsSbN,” in: Physics and Mechanics of New Materials and Their Applications, edited by I. A. Parinov and S. H. Chang, Ch. 10, pp. 107-123, 2013
  29. Y. C. Chin, J. Y. Chen, B. H. Chen, H. S. Tsai, Y. S. Huang, and H. H. Lin, “Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs,” Appl. Phys. Lett., vol. 101, issue 25, p. 251910, Dec. 2012
  30. S. T. Lo, H. E. Lin, S.-W. Wang, H. D. Lin, Y. C. Chin, H. H. Lin, J. C. Lin, and C. T. Liang, “Electron transport in a GaPSb film,” Nanoscale Res. Lett., vol. 7, p. 640, Nov. 2012
  31. J.-W. Yu, P.-C. Yeh, S.-L. Wang, W.-R. Wu, M.-H. Mao, H. H. Lin, and L.-H. Peng, “Short channel effects on gallium nitride/gallium oxide nanowire transistors,” Appl. Phys. Lett., vol. 101, issue 18, p. 183501, Oct. 2012
  32. C. J. Wu, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs,” Appl. Phys. Lett., vol. 101, issue 9, p. 091902, Aug. 2012
  33. Y. C. Chin, H. H. Lin, and C. H. Huang, “InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction,” IEEE Electron Device Lett., vol. 33, issue 3, pp. 489-491, Mar. 2012
  34. H. P. Hsu, Y. T. Lin, and H. H. Lin, “Evidence of nitrogen reorganization in GaAsSbN alloys,” Jpn. J. Appl. Phys., vol. 51, p. 022605, Jan. 2012
  35. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy,” Thin solid film, vol. 520, issue 13, pp. 4486-4492, 2012
  36. J. M. Lin, L. C. Chou, and H. H. Lin, “Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells,” J. Vac. Sci. and Technol. B, vol. 29, issue 2, p. 021011, 2011
  37. F. Cheng, T. Fa, S. Yao, C. J. Wu, H. H. Lin, and Z. C. Feng, “Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction,” J. Phys. D, vol. 406, pp. 3219-3221, 2011
  38. Y. W. Tai, C. C. Yang, M. H. Yang, C. S. Hong, H. H. Lin, and B. Z. Wan, “Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures,” J. Taiwan Inst. of Chem. Eng, vol. 42, pp. 669-673, 2011
  39. T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy,” J. Crystal Growth, vol. 318, issue 1, pp. 558-562, 2011
  40. K. J. Cheetham, A. Krier, I. Patel, J. S. Tzeng, and H. H. Lin, “Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE,” J. Phys. D, vol. 44, issue 8, p. 085404, 2011
  41. H. P. Hsu, Y. S. Huang, Y. T. Lin, H. H. Lin, and K. K. Tiong, “Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy,” Mater. Chem. Phys., vol. 124, issue 1, pp. 558 -562, Nov. 2010
  42. Y. C. Chin, H. H. Lin, C. H. Huang, and M. N. Tseng, “InGaPSb/GaAs: its band offsets and application to heterojunction bipolar transistors,” Electron Device Lett., vol. 31, issue 5, pp. 434 - 436, May 2010
  43. Y. T. Lin, T. C. Ma, H. H. Lin, J. D. Wu, and Y. S. Huang, “Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN,” Appl. Phys. Lett., vol. 96, no. 01, 011903, Jan. 2010
  44. S. P. Wang, T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN,” International J. of Electrical Eng., vol. 16, no. 4, pp. 319-326, Aug. 2009
  45. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures,” Appl. Phys. Lett., vol. 94, no. 21, 211906, Jun. 2009
  46. P. Sitarek, H. P. Hsu, Y. S. Huang, J. M. Lin, H. H. Lin, and K. K. Tiong, “Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures,” J. Appl. Phys., vol. 105, no. 12, 123523, Jun. 2009
  47. Y. R. Lin, H. H. Lin, and J. H. Chu, “GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer,” Electronics lett., vol. 45, issue 13, pp. 682-683, Jun. 2009
  48. H. P. Hsu, Y. N. Huang, Y. S. Huang, Y. T. Lin, T. C. Ma, H. H. Lin, K. K. Tiong, P. Sitarek, and J. Misiewicz, “Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,,” Phys. Stat. Sol. A, vol. 206, no. 5, pp. 830-835, May 2009
  49. Y. R. Lin, Y. F. Lai, C. P. Liu, and H. H. Lin, “GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer,” Appl. Phys. Lett., vol. 94, no. 11, 111106, Mar. 2009
  50. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Energy gap reduction in GaAsSbN,” Appl. Phys. Lett., vol 93, no. 17, 171914, Oct. 2008
  51. Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics,” Appl. Phys. Lett., vol. 93, no. 12, 121903, Sept. 2008
  52. S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai, “Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance,” Thin Solid Films, vol. 516, issue 22, pp. 8049-8058, Sept. 2008
  53. T. C. Lin, T. C. Ma and H. H. Lin, “Design and fabrication of AlGaAs ambient light detectors,” IEEE Photonic Tech. Lett., Vol. 20, No. 16, 1429-1431, Aug. 2008
  54. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence of InAs0.04P0.67Sb0.29,” J. Appl. Phys., Vol. 104, 023535, Jul. 2008
  55. K. Y. Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, L. H. Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, J. Y. Wu, and S. D. Lin, “Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems,” J. Physics: Condensed Matter, Vol. 20, No. 9, 295223, Jul. 2008
  56. H. P. Hsu, Y. N. Huang, Y. S. Huang, Y. T. Lin, T. C. Ma, H. H. Lin, K. K. Tiong, P. Sitarek, and J. Misiewicz, “Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy,” J. Appl. Phys., Vol. 103, 113508, Jun. 2008
  57. J. R. Lee, C. R. Lu, H. L. Liu, H. H. Lin, and L. W. Sung, “Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures,” Phys. Stat. Sol. (c), Vol. 5, No. 9, 3054-3056, May 2008
  58. T. C. Ma, Y. T. Lin, and H. H. Lin, “Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy,” J. of Crystal Growth, Vol. 310, 2854-2858, May 2008
  59. C. Y. Chen, J. R. Lee, C. R. Lu, L. W. Sun, and H. H. Lin, “Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers,” J. Phys. and Chem. Solids, Vol. 69, 493-496, Feb. 2008
  60. T. S. Wang, J. T. Tsai, K. I. Lin, J. S. Hwang, H. H. Lin, and L. C. Chou, “Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells,” Materials Science and Engineering B, 147, 131-135, Feb. 2008
  61. C. H. Chan, C. H. Lee, Y. S. Huang, J. S. Wang, and H. H. Lin, “Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy,” J. Appl. Phys., Vol. 101, 103102, May 2007
  62. Y. C. Wen, L. C. Chou, H. H. Lin, V. Gusev, K. H. Lin, and C. K. Sun, “Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects,” Appl. Phys. Lett., Vol. 90, 172102, Apr. 2007
  63. S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai,, “Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy,” Appl. Phys. Lett., Vol. 90, 172106, Apr. 2007
  64. J. S. Hwang, H. C. Lin, C. K. Chang, T. S. Wang, L. S. Chang, J. I. Chyi, W. S. Liu, S. H. Chen, H. H. Lin, and P. W. Liu, “The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures,” Optics Express, Vol. 15, No. 8, pp. 5120-5125, Apr. 2007
  65. H. S. Fan, Y. S. Su, F. H. Chu, F. Y. Chang, H. H. Lin, and C. F. Lin, “Opposite temperature effects of quantum-dot laser under dual-wavelength operation,” Appl. Phys. Lett., Vol. 90, 181113, Apr. 2007
  66. G. Tsai, D. L. Wang, C. E. Wu, C. J. Wu, Y. T. Lin, and H. H. Lin, “InAsPSb quaternary alloy grown by gas source molecular beam epitaxy,” J. of Crystal Growth, Vol.301-302, pp.134-138, Apr. 2007
  67. H. P. Hsu, P. Sitarek, Y. S. Huang, P. W. Liu, H. H. Lin, and K. K. Tiong, “Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells,” Phys. Stat. Sol. (a), Vol. 204, No. 2, 430-438, Feb. 2007
  68. C. H. Lin, W. W. Pai, F. Y. Chang, and H. H. Lin, “Comparative study of InAs quantum dots with different InGaAs capping methods,” Appl. Phys. Lett., 90, 063102, Feb. 2007
  69. T. T. Chen, C. L. Cheng, Y. F. Chen, F. Y. Chang, H. H. Lin, C. T. Wu, and C. H. Chen, “Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies,” Phys. Review B, 75, 033310, Jan. 2007
  70. J. S. Wang, S. H. Yu, Y. R. Lin, H. H. Lin, C. S. Yang, T. T. Chen, Y. F. Chen, G. W. Shu, J. L. Shen, R. S. Hsiao, J. F. Chen, and J. Y. Chi, “Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures,” Nanotechnology, 18, 015401, Jan. 2007
  71. C. F. Huang, Y. H. Chang, H. H. Cheng, Z. P. Yang, H. D. Yeh, C. H. Hsu, C. T. Liang, D. R. Hang, and H. H. Lin, “An experimental study on Gamma(2) modular symmetry in the quantum Hall system with a small spin splitting,” J. Phys: Condens. Matter, 19, 026205, Jan. 2007
  72. L. C. Chou, Y. R. Lin, C. T. Wan, and H. H. Lin, “[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy,” Microelectronics Journal, 37, 1511-1514, Dec. 2006
  73. Y. C. Wen, K. H. Lin, T. F. Kao, L. C. Chou, H. H. Lin, and C. K. Sun, “Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics,” J. of Applied Phys., 100, 103516, Nov. 2006
  74. P. W. Liu, G. Tsai, H. H. Lin, A. Krier, Q. D. Zhuang, and M. Stone, “Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy,” Appl. Phys. Lett., 89, 201115, Nov. 2006
  75. C. S. Lee, F. Y. Chang, D. S. Liu, and H. H. Lin, “InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer,” Jpn. J. of Applied Phys., Vol. 45, No. 8A, 6271-6274, Aug. 2006
  76. A. Krier, M. Stone, Q. D. Zhuang, P. W. Liu, G. Tsai, and H. H. Lin, “Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes,” Appl. Phys. Lett., 89, 091110, Aug. 2006
  77. H. P. Hsu, P. Sitarek, Y. S. Huang, P. W. Liu, J. M. Lin, H. H. Lin, and K. K. Tiong, “Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells,” J. of Physics: Condensed Matter, Vol. 18, 5927-5935, Jul. 2006
  78. C. R. Lu, H. L. Liu, J. R. Lee, C. H. Wu, H. H. Lin, and L. W. Sung, “Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers,” J. of Physics and Chemistry of Solids, Vol. 66, 2082-2085, Nov. 2005
  79. W. T. Chu, H. H. Lin, Y. H. Wang, C. T. Hsieh, Y. T. Lin, C. S. Wang, “Performance evaluation of field-enhanced p-channel split-gate flash memory,” IEEE Electron Device Lett., Vol 26(9), 670-672, Sept. 2005
  80. H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih, and H. H. Lin, “Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents,” Appl. Phys. Lett., Vol. 87, 081908, Aug. 2005
  81. W. T. Chu, H. H. Lin, H. C. Sung, Y. H. Wang, Y. T. Lin, C. H. Wang, “Shrinkable triple self-aligned field-enhanced split-gate flash memory,” IEEE Trans. on Electron Device, Vol. 51 (10), 1667-1671, Oct. 2004
  82. W. T. Chu, H. H. Lin, W. L. Tu, Y. H. Wang, C. T. Hsieh, H. C. Sung, Y. T. Lin, C. S. Tsai and C. S. Wang, “Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory,” IEEE Electron Device Lett., EDL-25 (9), 616-618, Sept. 2004
  83. M.-H. Mao, T.-Y. Wu, D.-C. Wu, F.-Y. Chang, and H.-H. Lin, “Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers,” Optical and Quantum Electronics, Vol. 36 (10), 927-933, Aug. 2004
  84. W. T. Chu, H. H. Lin, Y. H. Wang, C. T. Hsieh, H. C. Sung, Y. T. Lin, and C. S. Wang, “High SCR design for one-transistor split-gate full-featured EEPROM,” IEEE Electron Device Lett., EDL-25 (7), 498-500, Jul. 2004
  85. T. S. Lay, W. T. Kuo, L. P. Chen, Y. H. Lai, H. Hung, J. S. Wang, J. Y. Chi, D. K. Shih, and H. H. Lin, “Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy,” J. Vac. Sci. Technol. B, Vol. 22 (3), 1491-1494, Jun. 2004
  86. T. T. Chen, W. S. Su, Y. F. Chen, P. W. Liu, and H. H. Lin, “Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells,” Appl. Phys. Lett., Vol. 85 (9), 1526-1528, Jun. 2004
  87. Y.-M. Chang, H. H. Lin, C. T. Chia, and Y. F. Chen, “Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells,” Appl. Phys. Lett., Vol. 84 (14), 2548-2550, Apr. 2004
  88. D. R. Hang, D. K. Shih, C. F. Huang, W. K. Hung, Y. H. Chang, Y. F. Chen and H. H. Lin, “Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Subnikov de-Haas oscillation,” Physica.E, 22, 308-311, Apr. 2004
  89. P. W. Liu, G. H. Liao, and H. H. Lin, “1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy,” Electronics Lett., Vol. 40 (3), 177-178, Feb. 2004
  90. F. Y. Chang, J. D. Lee, and H. H. Lin, “Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy,” Electronics Lett, Vol. 40 (3), 179-180, Feb. 2004
  91. C. M. Lai, F. Y. Chang, H. H. Lin, and G. J. Jan, “Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy,” Jpn. J. Appl. Phys, Vol. 43 (2), 735-738, Feb. 2004
  92. D. K. Shih, H. H. Lin, and Y. H. Lin, “Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared lasers applications,” IEE Proceedings – Optoelectronics, Vol. 150, No. 3, pp. 253-258, Jun. 2003
  93. C. M. Lai, F. Y. Chang, C. W. Chang, C. H. Kao, H. H. Lin, G. J. Jan, and J. Lee, “Temperature dependence of photoreflectance in InAs/GaAs quantum dot,” Appl. Physics. Lett, Vol. 82, No. 22, pp. 3895-3897, Jun. 2003
  94. T. T. Chen, C. H. Chen, W. Z. Cheng, W. S. Su, M. H. Ya, Y. F. Chen, P. W. Liu, and H. H. Lin, “Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells,” J. Appl. Physics, Vol. 93, No.12, pp. 9655-9658, Jun. 2003
  95. L. W. Sung, and H. H. Lin, “Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers,” Appl. Physics. Lett, Vol. 83, No. 6, pp. 1107-1109, Jun. 2003
  96. G. R. Chen, H. H. Lin, J. S. Wang and D. K. Shih, “Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy,” J. Electronic Mat, Vol. 32, No. 4, pp. 244-248, Apr. 2003
  97. F. Y. Chang, C. C. Wu, and H. H. Lin, “Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers,” Appl. Physics. Lett, Vol. 82, No. 25, pp. 4477-4479, Apr. 2003
  98. D. K. Shih, H. H. Lin, L. W. Sung, T. Y. Chu, and T. R. Yang, “Band Gap Reduction in InAsN Alloys,” Jpn. J. Appl. Physic, Vol. 42, pp. 375-383, Feb. 2003
  99. J-S. Hwang, M-F. Chen, K-I Lin, C-N. Tsai, W-C. Hwang, W-Y.Chou, H. H. Lin, and M. C. Chen, “Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance,” Jpn. J. Appl. Phys, Vol. 42, pp. 5876-5879, Feb. 2003
  100. C. M. Lai, F. Y. Chang, H. H. Lin, an G. J. Jan, “A study of optical properties of InGaAs/GaAs quantum dots,” J. of the Korean Physical Society, Vol. 42, pp. S114-S119, 2003
  101. P. W. Liu, M. H. Lee, H. H. Lin, and J.-R. Chen, “Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy,” Electronics Lett, Vol. 38 (22), pp. 1355-1356, Oct. 2002
  102. Y. S. Chiu, M. H. Ma, W. S. Su, T. T. Chen, Y. F. Chen, and H. H. Lin, “Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb quantum wells induced by interface chemical bonds,” Appl. Physics. Lett, Vol. 81, No.26, pp. 4943-4945, Oct. 2002
  103. D. R. Hang, C. F. Huang, W. K. Hung, Y. H. Chang, J. C. Chen, H. C. Yang, Y. F. Chen, D. K. Shih, T. Y. Chu, and H. H. Lin, “Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well,” Semicond. Sci. Technol, 17, pp. 999-1003, Aug. 2002
  104. C. T. Lee, H. Y. Lee, and H. H. Lin, “Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers,” Jpn. J. Appl. Physic, Vol. 41, pp. 5937-5940, Jul. 2002
  105. Y. Y. Ke, M. H. Ya, Y. F. Chen, J. S. Wang, and H. H. Lin, “Photoluminescence study of hydrogen passivation in InAsxN1-x/InGaAs single quantum well on InP,” Appl. Phys. Lett, Vol. 80 (19), pp. 3539-3541, May 2002
  106. L. W. Sung, H. H. Lin, and C. T. Chia, “Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE,” J. Crystal Growth, Vol. 241(3), pp. 320-324, Mar. 2002
  107. W. K. Hung, K. S. Cho, M. Y. Chem, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, and T. R. Yang, “Nitrogen induced enhancement of the electron effective mass in InAsxN1-x,” Appl. Phys. Lett, Vol. 80 (5), pp. 796-799, Feb. 2002
  108. W. C. Wu, H. Wang, and H. H. Lin, “GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs,” Electronics Lett, Vol.38, No.4, pp. 185-186, Feb. 2002
  109. S. C. Yang, H. C. Chiu, Y.-J. Chan, H. H. Lin, J.-M. Kuo, “(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications,” IEEE Trans. on Electron Devices, Vol. 48 No. 12, pp. 2906-2910, Dec. 2001
  110. J. S. Wang, H. H. Lin, L. W. Sung, and G. R. Chen, “Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy,” J. Vac. Sci. Technol. B, Vol. 19(1), pp. 202-206, Oct. 2001
  111. Ding-Kang Shih, H. H. Lin, and Y. H. Lin, “InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m,” Electronics Lett, Vol. 37, No. 22, pp. 1342-1343, Oct. 2001
  112. H. C. Chiu, S. C. Yang, Y. J. Chan, and H. H. Lin, “High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs,” IEICE Trans. Electron., Vol. E84-C, No. 10, pp. 1312-1317, Oct. 2001
  113. G. R. Chen, H. H. Lin, J. S. Wang, and D. K. Shih, “Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells,” J. of Appl. Physics., Vol. 90, pp. 6230-6235, Sept. 2001
  114. C. H. Lee, Y. H. Chang, C. F. Huang, M. Y. Huang, H. H. Lin, and C. P. Lee, “Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells,” Chinese Journal of Physics, Vol. 39, No. 4, pp. 363-368, Aug. 2001
  115. R. M. Lin, S. C. Lee, H. H. Lin, Y. T. Dai, and Y. F. Chen, “Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice,” J. of Crystal Growth, Vol. 227, pp.1034-1038, Jul. 2001
  116. C. A. Chang, C. Z. Wu, P. Y. Wang, X. J. Guo, Y. T. Wu, C. Y. Liang, F. C. Hwang, W. C. Jiang, F. J. Lay, L. W. Sung, and H. H. Lin, “Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy,” J. of Crystal Growth, Vol. 225 (2-4), pp.550-555, May 2001
  117. C. F. Huang, Y. H. Chang, C. H. Lee, H. D. Yeh, C.-T. Liang, Y. F. Chen, H. H. Lin, H. H. Cheng, and G. J. Hwang, “Insulator-quantum Hall conductor transitions at low magnetic field,” Physical Review B, Vol. 65, No. 16, pp. 045303-1 –, May 2001
  118. C. T. Lee, K. C. Shyu, I. J. Lin, and H. H. Lin, “GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer,” Materials Science and Engineering, B74, pp. 147-150, Mar. 2000
  119. J. C. Fan, W. K. Hung, Y. F. Chen, J. S. Wang, and H. H. Lin, “Mechanism for photoluminescence in an InyAs1–yN/InxGa1–xAs single quantum well,” Physical Review B, Vol. 62, No. 16, pp. 10990-10994, Jan. 2000
  120. J. S. Liu, J. S. Wang, K. Y. Hsieh, H. H. Lin, “Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy,” J. Crystal Growth, Vol. 206, pp. 15-22, 1999
  121. J. S. Wang and H. H. Lin, “Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy,” J. Vac. Sci. Technol. B, Vol. 17, pp. 1997-2000, 1999
  122. J. C. Fan, Y. F. Chen, D. Y. Lin, Y. S. Huang, M. C. Chen, and H. H. Lin, “Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance,” J. Appl. Phys, Vol. 86 (3), pp. 1460-1462, 1999
  123. K. T. Tsen, D. K. Ferry, J. S. Wang, C. S. Huang and H. H. Lin, “Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy,” Physica B: Condensed Matter, Volume 272, Issues 1-4, pp. 416-418, 1999
  124. D. N. Talwar, H. H. Lin, and Z. C. Feng, “Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers,” Mat. Chem. Phys.
  125. Z.C. Feng, J.M. Liu, D. Xie , M. T. Nafisa, C. W. Zhang , L.Y. Wan , B.B. Jiang , H. H. Lin , Z. R. Qiu, W. J. Lu , B. Klein , I. T Ferguson,and S. Y. Liu, “Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy,” Materials

Conference & proceeding papers:

  1. S. Z. Zhang, C. C Yang, and H. H. Lin, “Growth and relaxation behaviors of GaAsBi on (001) GaAs,” IEDMS 2024, 2024
  2. C. C. Yang, S. J. Tsai, and H. H. Lin, “GaAsBi grown on GaAs with a Bi mole fraction up to 13.5%,” IEDMS 2023, Kaohsiung, Taiwan, 2023
  3. C. Chou and H. H. Lin, “Nearly twinning-free bismuth film grown on c-Plane Sapphire Substrate,” IEDMS 2023, Kaohsing, Taiwan, 2023
  4. C. Chou, K. R. Weng, and H. H. Lin, “Dry Transfer and Structural Properties of Bismuth Thin Film Grown on Si(111),” IEDMS 2023, Kaohsing, Taiwan, 2023
  5. L. C. Tsai, C. Chou, and H. H. Lin, “Transport Properties of Bismuth Nanowires,” IEDMS 2023, Kaohsing, Taiwan, 2023
  6. S. Z. Zhang, C. C Yang, and H. H. Lin, “MBE growth of GaAsBi nanowires on GaAs (111)A substrates,” IEDMS 2023, Kaohsiung, Taiwan, 2023
  7. S. J. Tsai, C. C. Yang, C. Chou, and H. H. Lin, “MBE Growth of GaAsBi on Bi/(111)Si and (111)A GaAs,” IEDMS 2022, Nantou, Taiwan, 2022
  8. C. H. Wu, C. Chou, and H. H. Lin, “Structural properties of ~10-nm-thick Bismuth thin film grown on (111) Si by quasi-van-der-Waals-epitaxy,” IEDMS 2022, Nantou, Taiwan, 2022
  9. C. Chou, C. H. Wu, and H. H. Lin, “Growth of (0001)-textured bismuth nanofilm on SiO2 by MBE,” IEDMS 2022, Nantou, Taiwan, 2022
  10. Z. Y. Huang, C. Chou, and H. H. Lin, “Study on the Schottky Barrier Height of Au/Bi/p-Si junction,” IEDMS 2022, Nantou, Taiwan, 2022
  11. S. J. Tsai, G. L. Peng, and H. H. Lin, “Infrared GaAsBi Grown on GaAs by Molecular Beam Epitaxy,” 15th MIODM, International Conference on Mid-Infrared Optoelectronic Materials and Devices, Guildford, U.K., 2021
  12. L. C. Hung, C. Chou, C. C. Chen, and H. H. Lin, “Quantization effect on the magnetotransport in textured Bi (0003) Nanofilms,” IEDMS 2021, Tainan, Taiwan, 2021
  13. C. C. Chen, C. Chou, L. C. Hung, and H. H. Lin, “Abnormal Hall effect in bismuth thin film,” IEDMS 2021, Tainan, Taiwan, 2021
  14. R. H. Yan, H. C. Huang, and H. H. Lin, “Double-Diffusion Plannar InGaAs/InP Avalanche Photodiode with Attached Guard Ring and Floating Guard Ring,” IEDMS 2021, Tainan, Taiwan, 2021
  15. S. J. Tsai, G. L. Peng, and H. H. Lin, “Growth model of GaAsBi alloy by molecular beam epitaxy,” IEDMS 2021, Tainan, Taiwan, 2021
  16. S. J. Tsai, G. L. Peng, and H. H. Lin, “Coherently strained GaAsBi alloys grown on GaAs by MBE,” OPTIC 2021, Kaohsing, Taiwan, 2021
  17. L. H. Nieh, Y. L. Kao, and H. H. Lin, “SWIR photodetector for light scanning,” IEDMS 2020, New Taipei City, Taiwan, 2020
  18. B. X. Wu, and H. H. Lin, “Effect of bond distortion on the X-ray diffraction of highly mismatched InPSb alloy,” IEDMS 2020, New Taipei City, Taiwan, 2020
  19. S. J. Tsai, G. L. Peng, and H. H. Lin, “MBE growth of highly mismatched GaAsBi on GaAs,” IEDMS 2020, New Taipei City, Taiwan, 2020
  20. C. C. Lu, C. Chou, and H. H. Lin, “Observation of weak anti-localization in a bismuth thin film grown by MBE,” OPTIC 2020, Optics & Photonics Taiwan, the International Conference 2020, Taipei, Taiwan, 2020
  21. Y. Xiao, C. Chou, and H. H. Lin, “Effect of thermal annealing on the structural and transport properties of bismuth thin films,” OPTIC 2020, Optics & Photonics Taiwan, the International Conference 2020, Taipei, Taiwan, 2020
  22. R. H. Yang, and H. H. Lin, “Effect of attached guard ring on the breakdown voltage of SAGCM InGaAs/InP avalanche photodiode,” OPTIC 2020, Optics & Photonics Taiwan, the International Conference 2020, Taipei, Taiwan, 2020
  23. Hao-Kai Hsieh1, Chieh Chou1, Hao-Hsiung Lin*,1,2,3, Jiunn-Jye Luo4, and Shao-Yi Li4, “Strain relaxation properties of InAsyP1-y metamorphic buffer layers for SWIR InGaAs photodetector,” IEEE 2018次世代電子元件國際研討會 (ISNE 2018), 集思北科大會議中心 台北, May 2018
  24. Yen-Cheng Ko, Ding-Lun Wu, Che-Wei Yang, and Hao-Hsiung Lin, “Reactive-Ion Etching of Bismuth Thin Film Using CHF3,” International Electron Devices & Materials Symposium IEDMS2018, Keelung, Taiwan, ROC, 2018
  25. Xinyou Liu, Yen-Cheng Ko, Chieh Chou and Hao-Hsiung Lin, “Electrical Properties of Bismuth Thin Films Analyzed by Transmis-sion Line method,” International Electron Devices & Materials Symposium IEDMS2018, Keelung, Taiwan, ROC, 2018
  26. F. W. Pranoto, C. Y. Tsai, Y. C. Liao, L. C. Chen, K. H. Chen, H. H. Lin, and Z. C. Feng, “Photoluminescence and Raman scattering of degenerate InN,” OPTIC 2014, optics and photonics Taiwan, international conference 2014, 2014-Thu-S0102-O006, Taichung, Taiwan, Dec. 2014
  27. M. C. Liu, Z. C. Feng, and H. H. Lin, “X-ray absorption near edge structure of silicon in indium arsenide,” OPTIC 2014, optics and photonics Taiwan, international conference 2014, 2014-Thu-S1001-O002, Taichung, Taiwan, Dec. 2014
  28. T. H. Huang, W. C. Chen, K. C. Chen, and H. H. Lin, “Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer,” OPTIC 2014, optics and photonics Taiwan, international conference 2014, 2014-Fri-P1002-P006, Taichung, Taiwan, Dec. 2014
  29. C. Y. Tsai, B. Xin, Z. C. Feng, Y. M. Zhang, R. X. Jia, and H. H. Lin, “Polarized Raman spectroscopy of 3C-SiC film grown on 4H-SiC substrate,” OPTIC 2014, optics and photonics Taiwan, international conference 2014, 2014-Fri-P1002-P010, Taichung, Taiwan, Dec. 2014
  30. S. C. Chen, Y. H. Lin, and H. H. Lin, “Study of twin defects in (111)B GaAsSb by X-ray diffraction,” IEDMS 2014, international electron devices and materials symposium, 1113, Hualien, Taiwan, Nov. 2014
  31. T. H. Huang, W. C. Chen, K. C. Chen, and H. H. Lin, “Effect of focued ion beam imaging process on the crystallinity of InAs,” IEDMS 2014, international electron devices and materials symposium, 1178, Hualien, Taiwan, Nov. 2014
  32. Y. C. Lin, M. H. Mao, C. J. Wu, and H. H. Lin, “Mid-infrared whispering gallery mode emission from InAsSb/InAsPSb multiple quantum wells in a disk cavity,” MIOMD 2014 infrared optoelectronics: materials and devices, 50, Montpellier, France, Oct. 2014
  33. C. Y. Tsai, W. C. Chen, P. H. Chang, C. I. Wu, and H. H. Lin, “Band discontinuity in InAsPSb alloy system,,” MIOMD 2014 infrared optoelectronics: materials and devices, 58, Montpellier, France, Oct. 2014
  34. C. Y. Tsai, M. C. Liu, Y. C. Chin, Z. C. Feng, and H. H. Lin, “Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure,” 21th Symposium on nano device technology, Hsinchu, Taiwan, May 2014
  35. Y. H. Lin, S. C. Chen, Y. R. Chen, and H. H. Lin, “Structural properties of GaAsSb grown on (111)B GaAs,” 21th Symposium on nano device technology, Hsinchu, Taiwan, May 2014
  36. C. X. Wang, F. D. Li, S. C. Wang, M. Zhu, X. Zhang, H. H. Lin, and Z. C. Feng, “Properties of Variable Al Content of AlGaN Layers Grown by MOCVD,” OPTIC 2013, optics and photonics Taiwan, international conference 2013, SAT-S1006-O002, Zhongli, Taiwan, Dec. 2013
  37. B. W. Wang, C. J. Hong-Liao, H. H. Lin, and Z. C. Feng, “Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering,” IEDMS 2013, international electron devices and materials symposium, P2-24, Nantou, Taiwan, Nov. 2013
  38. C. X. Wang, Y. T. He, M. T. Niu, J. Y. Yao, E. Jones, Z. R. Qiu, X. Zhang, H. H. Lin, and Z. C. Feng, “Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes,” IEDMS 2013, international electron devices and materials symposium, P2-36, Nantou, Taiwan, Nov. 2013
  39. C. Y. Tsai, Y. C. Chin, and H. H. Lin, “Raman spectroscopy of GaAsPSb alloys,” IEDMS 2013, international electron devices and materials symposium, P2-62, Nantou, Taiwan, Nov. 2013
  40. H. M. Wu, Y. J. Yang, and H. H. Lin, “Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate,” TACT 2013 international thin films conference, C-O-429001, Taipei, Taiwan, Oct. 2013
  41. Y. R. Chen, and H. H. Lin, “Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs,” 40th international symposium on compound semiconductors (ISCS 2013), MoPC-01-04, Kobe, Japan, May 2013
  42. Y. C. Chin, H. H. Lin, H. S. Guo, and C. H. Huang, “GaAsPSb and its application to heterojunction bipolar transistors,” 40th international symposium on compound semiconductors (ISCS 2013), MoPC-02-11, Kobe, Japan, May 2013
  43. J. Wu, Y. T. Lin and H. H. Lin, “Defects probing by temperature dependence Raman scattering of GaAsSbN,” IEDMS 2012, international electron devices and materials symposium, CO05, Kao-hsiung, Taiwan, Dec. 2012
  44. H. M. Wu, S. J. Tsai, H. I. Ho, H. H. Lin, and Y. J. Yang, “A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells,” IEDMS 2012, international electron devices and materials symposium, AP17, Kaohsiung, Taiwan, Dec. 2012
  45. S. H. Li, C. J. Wu and H. H. Lin, “Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution,” IEDMS 2012, international electron devices and materials symposium, CP09, Kaohsiung, Taiwan, Dec. 2012
  46. W. C. Chen, L. H. Chen, Y. T. Lin and H. H. Lin, “Structural properties of InAs nanowires grown by GSMBE,” IEDMS 2012, international electron devices and materials symposium, CP45, Kaohsiung, Taiwan, Dec. 2012
  47. W. C. Chen, L. H. Chen, Y. T. Lin, and H. H. Lin, “Slanted InAs nanowires gorwn by GSMBE,” OPTIC 2012, optics and photonics Taiwan, international conference 2012, CO05, Taipei, Taiwan, Dec. 2012
  48. C. L. Chiou, Z. C. Feng, and H. H. Lin, “Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopy,” OPTIC 2012, optics and photonics Taiwan, international conference 2012, Taipei, Taiwan, Dec. 2012
  49. H. H. Lin, “Sb-based zincblende alloys with strong structural disorder,” Indo-Taiwan workshop on nanodevices, Bangalore, India, Nov. 2012
  50. C. J. Wu, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “Study on the structural properties of InP0.52Sb0.48 on GaAs,” MIOMD-XI, infrared optoelectronics: materials and devices, Chicago, USA, Oct. 2012
  51. H. H. Lin, C. L. Chiou, Y. T. Lin, T. C. Ma, J. S. Wu, and Z. C. Feng, “Short range structure of dilute nitride GaAsSbN,” Russia-Taiwanese Symposium, Physics and mechanics of new materials and their applications, Rostov-on-Don, Russia, Jun. 2012
  52. C. J. Wu, G. T. Chen, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “Study on the structural properties of InP0.52Sb0.48 on GaAs,” 2012 Taiwan MBE Conference, Tainan, Taiwan, May 2012
  53. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Structural properties of GaAsSb grown on GaAs,” 2012 Taiwan MBE Conference, Tainan, Taiwan, May 2012
  54. G. T. Chen, C. J. Wu, Z. C. Feng, and H. H. Lin, “Study on the lattice structure of InAsPSb grown on GaAs,” 2012 Taiwan MBE Conference, Tainan, Taiwan, May 2012
  55. L. H. Chen, Y. T. Lin, and H. H. Lin, “MBE growth of InAs nanowires on Si,” 2012 Taiwan MBE Conference, Tainan, Taiwan, May 2012
  56. C. J. Wu, K. T. Chen, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “X-ray absorption find structures of InPSb alloys,” International photonics conference 2011 (IPC2011), A-SA-I 7-7, Tainan, Taipei, Dec. 2011
  57. C. J. Wu, K. T. Chen, Z. C. Feng, and H. H. Lin, “Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy,” 2011 International electron devices and materials symposia, C2-5, Taipei, Taiwan, Nov. 2011
  58. Y. T. Lin, J. S. Wu, Z. C. Feng, and H. H. Lin, “Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy,” 2011 International electron devices and materials symposia, C3-2, Taipei, Taiwan, Nov. 2011
  59. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Structural properties of (111)B GaAsSb grown on GaAs substrates,” 18th American conference on crystal growth and epitaxy, ACCGE-18, Monterey, California, USA, Jul. 2011
  60. C. J. Wu, K. T. Chen, Z. C. Feng, and H. H. Lin, “Extended X-ray absorption fine structure study on InP0.52Sb0.48/GaAs,” 38th international symposium on compound semiconductors (ISCS 2011), P1. 08, Berlin, Germany, May 2011
  61. C. J. Wu, G. Tsai, Z. C. Feng, and H. H. Lin, “Extended X-ray absorption fine structure of InAsPSb,” 23rd international conference on indium phosphide and related materials (IPRM 2011), P-31, Berlin, Germany, May 2011
  62. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Orentation dependent phase separation in GaAsSb,” 2011 AVS international plasma workshop – on processing and characterization of advanced materials, A007, Taipei, Mar. 2011
  63. C. J. Wu, S. W. Lo, and H. H. Lin, “'InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy,” 2010 internal conference on optics and photonics in Taiwan, Tainan, Taiwan, Dec. 2010
  64. Y. R. Lan, C. J. Wu, H. H. Lin, L. Y. Chang, and Z. C. Feng, “Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy,” 2010 international conference on optics and photonics in Taiwan, Tainan, Taiwan, Dec. 2010
  65. C. J. Wu, S. W. Lo, and H. H. Lin, “InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy,” 2010 international electron devices and materials symposia, C3-4, Jhongli, Taiwan, Nov. 2010
  66. J. S. Tzeng, C. J. Wu, C. J. Hong-Liao, and H. H. Lin, “Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy,” 2010 international electron devices and materials symposia, C3-6, Jhongli, Taiwan, Nov. 2010
  67. Y. T. Lin, Y. R. Lin, C. H. Ko, C. H. Wann, and H. H. Lin, “Hetero-epitaxy of InAs on patterened Si (100) substrates,” 2010 international electron devices and materials symposia, C4-2, Jhongli, Taiwan, Nov. 2010
  68. C. J. Wu, Y. R. Lan, L. Y. Chang, Z. C. Feng, and H. H. Lin, “X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy,” 2010 Micro-optics conference (MOC'10), WP84, Hsintsu, Taiwan, Oct. 2010
  69. C. J. Wu, G. Tsai, and H. H. Lin, “Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well,” 10th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-X), Shanghai, China, Sept. 2010
  70. T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE,” 16th international conference on crystal growth (ICCG-16), Beijing, China, Aug. 2010
  71. Y. R. Lan, C. J. Wu, H. H. Lin, T. S. Chan, and Z. C. Feng, “Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy,” Proceedings of MBE Taiwan 2010, pp. 92-93, Taipei, Taiwan, May 2010
  72. J. M. Lin, L. C. Chou, and H. H. Lin, “The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy,” 22nd international conference on indium phosphide and related materials (IPRM 2010), Kagawa, Japan, May 2010
  73. T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE,” Proceedings of MBE Taiwan 2010, pp. 57-58, Taipei, Taiwan, May 2010
  74. Y. T. Lin, T. C. Ma, and H. H. Lin, “Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy,” Proceedings of MBE Taiwan 2010, pp. 59-60, Taipei, Taiwan, May 2010
  75. S. W. Lo, C. J. Wu, and H. H. Lin, “Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy,” Proceedings of MBE Taiwan 2010, pp. 86-87, Taipei, Taiwan, May 2010
  76. C. J. Wu, G. Tsai, and H. H. Lin, “Optical properties of As-rich InAsSb/InAsPSb multiple quantum well,” Proceedings of MBE Taiwan 2010, pp. 90-91, Taipei, Taiwan, May 2010
  77. J. S. Tzeng, C. J. Wu, and H. H. Lin, “Raman scattering in InAsPSb quaternary alloys,” Proceedings of MBE Taiwan 2010, pp. 90-91, Taipei, Taiwan, May 2010
  78. C. J. Wu, G. Tsai, and H. H. Lin, “Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells,” OPT2009, AO225, Taipei, Taiwan, Dec. 2009
  79. Y. T. Lin, T. C. Ma, H. H. Lin, J. D. Wu, and Y. S. Huang, “Nitrogen atomic rearrangement in thermally annealed GaAsSbN,” OPT2009, IO141, Taipei, Taiwan, Dec. 2009
  80. Y. C. Chin, H. H. Lin, C. H. Huang, and M. N. Tseng, “Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD,” 2009 International electron devices and materials symposia, B1-2, Taoyuan, Taiwan, Nov. 2009
  81. C. J. Wu, G. Tsai, and H. H. Lin, “Photoluminescence of InAsSb/InAsPSb quantum well,” 2009 International electron devices and materials symposia, B2-2, Taoyuan, Taiwan, Nov. 2009
  82. J. M. Lin, L. C. Chou, and H. H. Lin, “The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells,” 2009 International electron devices and materials symposia, GB24, Taoyuan, Taiwan, Nov. 2009
  83. H. H. Lin, “Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucrures,” 2009 International electron devices and materials symposia, B3-1, Taoyuan, Taiwan, Nov. 2009
  84. Y. T. Lin, T. C. Ma, and H. H. Lin, “A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species,” 2009 International electron devices and materials symposia, B3-2, Taoyuan, Taiwan, Nov. 2009
  85. T. C. Ma, and H. H. Lin, “Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy,” 2009 International electron devices and materials symposia, B3-4, Taoyuan, Taiwan, Nov. 2009
  86. T. C. Ma and H. H. Lin, “Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN,” MBE Taiwan 2009, S-8, Hualien, Taiwan, Jun. 2009
  87. Y. T. Lin, T. C. Ma, S. P. Wang, and H. H. Lin, “Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN,” MBE Taiwan 2009, S-14, Hualien, Taiwan, Jun. 2009
  88. C. J. Wu, G. Tsai, and H. H. Lin, “InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy,” Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN, S-15, Hualien, Taiwan, Jun. 2009
  89. Y. R. Lin, J. H. Chu, and H. H. Lin, “Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers,” International conference on optics and photonics in Taiwan (OPT’08), Sat-S17-01, Taipei, Taiwan, Dec. 2008
  90. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction,” International conference on optics and photonics in Taiwan (OPT’08), Sat-S40-03, Taipei, Taiwan, Dec. 2008
  91. S. P. Wang, T. C. Ma, Y. T. Lin, and H. H. Lin, “Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN,” 2008 International electron devices and materials symposia, B1-1, Taichung, Taiwan, Nov. 2008
  92. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Band structure of dilute nitride GaAsSbN,” 2008 International electron devices and materials symposia, B3-1, Taichung, Taiwan, Nov. 2008
  93. Y. C. Chou, G. Tsai, and H. H. Lin, “Photoluminescence study of InAsPSb epilayers grown on GaAs substrates,” 2008 International electron devices and materials symposia, B5-1, Taichung, Taiwan, Nov. 2008
  94. Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics,” 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9), pp. 36-37, Freiburg, Germany, Sept. 2008
  95. C. J. Wu, and H. H. Lin, “Band alignment of InAsSb/InAsPSb quantum wells,” 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9), pp. 42-43, Freiburg, Germany, Sept. 2008
  96. H. H. Lin, T. C. Ma, Y. T. Lin, C. K. Chen, and T. Y. Chen, “Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy,” Proceedings of MBE Taiwan 2008, pp. 24-25, Hsinchu, Taiwan, Jun. 2008
  97. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment of InAsSb/InAsPSb quantum well,” Proceedings of MBE Taiwan 2008, pp. 35-36, Hsinchu, Taiwan, Jun. 2008
  98. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Origin of the annealing-induced blue-shift in GaAsSbN,” 20th International conference on InP and related materials, Paris, France, May 2008
  99. C. K. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “GaAsSbN/GaAs long wavelength PIN detectors,” 20th International conference on InP and related materials, Paris, France, May 2008
  100. K. Y. Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, L. H. Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, and S. D. Lin, “Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure,” American Physical Society spring meeting 2008 (APS2008), New Orleans, Louisiana, U.S.A., Feb. 2008
  101. C. K. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m,” International electron devices and materials symposia, B1-4, Hsinchu, Taiwan, Dec. 2007
  102. L. C. Chou and H. H. Lin, “Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy,” International electron devices and materials symposia, B4-3, Hsinchu, Taiwan, Dec. 2007
  103. I. C. Chen, G. Tsai, and H. H. Lin, “Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10,” International electron devices and materials symposia, B4-5, Hsinchu, Taiwan, Dec. 2007
  104. Y. R. Lin and H. H. Lin, “Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors,” International electron devices and materials symposia, B4-6, Hsinchu, Taiwan, Dec. 2007
  105. Y. T. Lin, T. C. Ma, T. Y. Chen and H. H. Lin, “Effect of thermal annealing on the optical properties of GaAsSbN,” International electron devices and materials symposia, B4-2, Hsinchu, Taiwan, Dec. 2007
  106. C. J. Wu, G. Tsai, and H. H. Lin, “Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally,” OPT2007, Taichung, Taiwan, Dec. 2007
  107. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Origin of the annealing-induced blue-shift in GaAsSbN bulk layers,” OPT2007, Taichung, Taiwan, Dec. 2007
  108. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy,” OPT2007, Taichung, Taiwan, Dec. 2007
  109. L. C. Chou and H. H. Lin, “[111]B-oriented GaAsSb/GaAs quantum wells grown by gas-source molecular beam epitaxy,” MBE Taiwan 2007, pp. 109-111, Kaohsiung, Taiwan, Jun. 2007
  110. T. C. Ma, T. Y. Chen, Y. T. Lin, and H. H. Lin, “Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates,” MBE Taiwan 2007, pp. 112-114, Kaohsiung, Taiwan, Jun. 2007
  111. T. C. Ma, Y. T. Lin, T. Y. Chen, L. C. Chou, and H. H. Lin, “Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy,” 17th International conference on InP and related materials, Matsu, Japan, May 2007
  112. C. J. Wu, G. Tsai, D. L. Wang, and H. H. Lin, “InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy,” 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8), pp, 66-67, Bad Ischl, Austria, May 2007
  113. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy,” 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8), pp. 164-165, Bad Ischl, Austria, May 2007
  114. T. Y. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy,” International electron devices and materials symposia, PA-060, Tainan, Taiwan, Dec. 2006
  115. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Effects of thermal annealing on the energy gap of GaAsSbN,” International electron devices and materials symposia, OA-008, Tainan, Taiwan, Dec. 2006
  116. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy,” OPT2006, AO-11, Hsinchu, Taiwan, Dec. 2006
  117. Y. R. Lin, J. S. Wang, and H. H. Lin, “Electric vertically coupled quantum dots grown by molecular beam epitaxy,” OPT2006, AO-21, Hsinchu, Taiwan, Dec. 2006
  118. J. M. Lin, L. C. Chou, and H. H. Lin, “A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy,” OPT2006, AO-33, Hsinchu, Taiwan, Dec. 2006
  119. D. L. Wang, G. Tsai, C. J. Wu, C. E. Wu, F. Tseng, and H. H. Lin, “Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy,” OPT2006, AO-47, Hsinchu, Taiwan, Dec. 2006
  120. T. C. Ma, Y. T. Lin, T. Y. Chen, and H. H. Lin, “Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy,” OPT2006, AO-53, Hsinchu, Taiwan, Dec. 2006
  121. Y. C. Wen, L. C. Chou, H. H. Lin, K. H. Lin, C. Y. Chen, and C. K. Sun, “Coherent acoustic phonon oscillation in (111) InGaAs/GaAs MQWs with piezoelectric fields,” OPT2006, CO-02, Hsinchu, Taiwan, Dec. 2006
  122. G. Tsai, D. L. Wang, C. E. Wu, C. R. Wu, Y. T. Lin, and H. H. Lin, “InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy,” 14th international conference on molecular beam epitaxy (MBE2006), TUA2-6, Tokyo, Japan, Oct. 2006
  123. H. H. Lin, “MBE growth of quaternary InAsPSb alloy,” MBE Taiwan 2006 and high K materials workshop, Chunli, Taiwan, Jun. 2006
  124. T. C. Ma, T. Y. Chen, S. K. Chang, Y. T. Lin, and H. H. Lin, “GaAsSbN grown on GaAs by gas source molecular beam epitaxy,” MBE Taiwan 2006 and high K materials workshop, Chunli, Taiwan, Jun. 2006
  125. G. Tsai, D. L. Wang, C. E. Wu, C. R. Wu, Y. T. Lin, and H. H. Lin, “InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy,” MBE Taiwan 2006 and high K materials workshop, Chunli, Taiwan, Jun. 2006
  126. C. E. Wu, G. Tsai, and H. H. Lin, “Mid-infrared InAsPSb/InAsSb quantum-well light emitter,” MBE Taiwan 2006 and high K materials workshop, Chuli, Taiwan, Jun. 2006
  127. L. C. Chou, Y. R. Lin, and H. H. Lin, “[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy,” 6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS), Nottingham, UK, Apr. 2006
  128. G. Tsai and H. H. Lin, “Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy,” 17th Indium Phosphide and Related Materials, Glasgow, Scotland, 2005
  129. H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih and H. H. Lin, “Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents,” 17th Indium Phosphide and Related Materials, Glasgow, Scotland, 2005
  130. H. H. Lin, P. W. Liu, C. L. Tsai, G. H. Liao, and J. Lin, “GaAsSb/GaAs quantum wells grown by MBE,” MBE Taiwan 2005, pp. 15-17, Hsinchu, Taiwan, 2005
  131. C. L. Tsai, P. W. Liu, G. H. Liao, M. H. Lee, and H. H. Lin, “Study on the band line-up of GaAsSb/GaAs quantum wells,” MBE Taiwan 2005, Hsinchu, Taiwan, 2005
  132. C. S. Lee, F. Y. Chang, D. S. Liu, and H. H. Lin, “InAs/InGaAs/GaAs coupled quantum-dot laser,” MBE Taiwan 2005, pp. 15-17, Hsinchu, Taiwan, 2005
  133. G. Tsai and H. H. Lin, “InPSb bulk layers grown by gas source molecular beam epitaxy,” Mid-infrared optoelectronics: Materials and Devices (MIOMD 7), Lancaster, UK, 2005
  134. C. L. Tsai, C. T. Wan, P. W. Liu, G. H. Liao, and H. H. Lin, “Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers,” Proceedings of 2005 EDMS, B58, Kaohsiung, Taiwan, 2005
  135. P. W. Liu, G. Tsai, H. H. Lin, and T. Krier, “Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy,” OPT2005, A-FR-II 4-2, Tainan, Taiwan, 2005
  136. G. Tsai, and H. H. Lin, “Growth of InPSb on InAs inside a miscibility gap using gas source MBE,” OPT2005, A-FR-II 4-3, Tainan, Taiwan, 2005
  137. H. P. Hsu, Y. S. Huang, P.W. Liu, H. H. Lin, and K. K. Tiong, “Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells,” OPT2005, PA-FR1-089, Tainan, Taiwan, 2005
  138. C. Y. Chen, C. M. Lai, and H. H. Lin, “Numerical simulation on optical properties of GaN/AlN quantum dots,” OPT2005, PA-FR1-137, Tainan, Taiwan, 2005
  139. G. L. Wang, Y. S. Huang, H. H. Lin, and C. H. Chan, “The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well,” OPT2005, PA-FR1-196, Tainan, Taiwan, 2005
  140. H. H. Lin, P. W. Liu, G. H. Liao, and C. L. Tsai, “GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes,” Proceedings of MBE Taiwan, pp. 28-30, Kao-hsiung, Taiwan, May 2004
  141. F. Y. Chang, C. S. Lee, C. C. Wu, and H. H. Lin, “Growth of InAs quantum dots with light emission at 1.3 m,” Proceedings of MBE Taiwan, pp. 40-42, Kao-hsiung, Taiwan, May 2004
  142. F. Y. Chang, G. H. Liao, C. S. Lee, and H. H. Lin, “InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy,” Proceeding of 16th Indium Phosphide and Related Materials, Kogoshima, Japan, 2004
  143. G. Tsai, and H. H. Lin, “MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications,” OPT 2004, A-SA-II 4-2, Chung-Li, Taiwan, 2004
  144. 142. L. C. Chou, B. L. Yen, J. D. Juang, H. T. Jan, and H. H. Lin, “Study on high-power resonant-cavity light-emitting diodes,” OPT 2004, A-SU-I 7-5, Chung-Li, Taiwan, 2004
  145. C. H. Yu, K. K. Kao, M. H. Mao, F. Y. Chang, and H. H. Lin, “Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection,” OPT 2004, A-SU-II 10-5, Chung-Li, Taiwan, 2004
  146. F. Y. Chang, C. S. Lee, C. C. Wu, and H. H. Lin, “Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm,” Proceedings of 2004 IEDMS, B3.3, pp. 289-29, Hsinchu, Taiwan, 2004
  147. G. H. Liao, C. L. Tsai, P. W. Liu, J. Lin, and H. H. Lin, “Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers,” Proceedings of 2004 IEDMS, B7.1, pp.471-474, Hsinchu, Taiwan, 2004
  148. F. Y. Chang, T. C. Wu, and H. H. Lin, “Effect of deposition method on the density of InAs/InGaAs quantum dot,” Proceeding of 15th Indium Phosphide and Related Materials, Santa Barbara, USA, 2003
  149. H. H. Lin, P. W. Liu, and J. R. Chen, “GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser,” Proceedings of the sixth Chinese optoelectronics symposium, pp. 112-115, Hong Kong, 2003
  150. M.-H. Mao, T.-Y. Wu, F.-Y. Chang, and H.-H. Lin, “1.3 micron In(Ga)As/GaAs quantum-dot lasers and their dynamic properties,” Proceedings of the 16th annual meeting of IEEE LEOS, pp. 118-119, Tucson, USA, 2003
  151. H.-H. Lin, D.-K. Shih, Y.-H. Lin and K.-H. Chiang, “InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers,” Proceedings of the 16th annual meeting of IEEE LEOS, pp. 806-807, Tucson, USA, 2003
  152. M.-H. Mao, D.-M. Yeh, P.-W. Liu, H.-H. Lin, H.-L. Chen and C.-T. Pan, “Characterization of three-dimensional GaAs/AlxOy near-infrared photonic crystals fabricated by using an auto-cloning technique,” Proceedings of the 16th annual meeting of IEEE LEOS, pp. 1024-1025, Tucson, USA, 2003
  153. H. H. Lin, P. W. Liu, and G. H. Liao, “GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers,” Proceedings of electron devices and materials symposium, pp. I59-I62, Keelung, Taiwan, 2003
  154. L. C. Chou, B. L. Yen, J. D. Juang, H. T. Jan, and H. H. Lin, “Resonant-cavity light-emitting diodes with coupled cavity,” Proceedings of electron devices and materials symposium, pp. 348-350, Keelung, Taiwan, 2003
  155. F. Y. Chang, G. H. Liao, C. S. Lee, and H. H. Lin, “InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy,” Proceedings of electron devices and materials symposium, pp. 491-494, Keelung, Taiwan, 2003
  156. Y. M. Chang, N. A. Chang, H. H. Lin, C. T. Chia, and Y. F. Chen, “Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures,” Proceedings of CLEO/Pacific Rim 2003, Vol. 2, pp. 481, Taipei, Taiwan, 2003
  157. C. L. Hsieh, T. M. Liu, M. C. Tien, C. K. Sun, L. W. Sung, and H. H. Lin, “Femtosecond carrier dynamics in InGaAsN single quantum well,” Proceedings of CLEO/Pacific Rim 2003, Vol. 1, pp. 83, Taipei, Taiwan, 2003
  158. G. Tsai, P. W. Liu, and H. H. Lin, “Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy,” Proceedings of OPT’03, Vol. 2, pp. 27-2, Taipei, Taiwan, 2003
  159. H. P. Hsu, Y. S. Huang, P. W. Liu, and H. H. Lin, “Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells,” Proceedings of OPT’03, Vol. 3, pp. 71-7, Taipei, Taiwan, 2003
  160. G. H. Liao, P. W. Liu, and H. H. Lin, “1.3m GaAsSb/GaAs single quantum well laser diode,” Proceedings of OPT’03, Vol. 3, pp. 274-, Taipei, Taiwan, 2003
  161. T. Y. Chu, H. H. Lin, and D. K. Shih, “Band gap reduction in InAsN alloy,” Proceeding of 14th Indium Phosphide and Related Materials, pp.253-256, Stockholm, Sweden, 2002
  162. P.-W. Liu, M.-H. Lee, and H. H. Lin, “Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser,” 15th Annual Meeting of IEEE Lasers and Electro-optics Society, Glasgow, Scotland, 2002
  163. T. M. Liu, M. C. Tien, J. W. Shi, C. K. Sun, L. W. Sung, H. H. Lin, B. R. Wu, and N. T. Yeh, “Femtosecond carrier dynamics in InGaAsN single quantum well,” Proceedings of OPT’02, pp. 16-18, Taipei, Taiwan, ROC, 2002
  164. L. W. Sung, G. Tsai, and H. H. Lin, “1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE,” Proceedings of OPT’02, pp. 142-144, Taipei, Taiwan, ROC, 2002
  165. D. K. Shih, H. H. Lin, and Y. F. Chen, “Structural properties and Raman modes of InAsN bulk films on (100) InP substrates,” Proceedings of OPT’02, pp. 361-363, Taipei, Taiwan, ROC, 2002
  166. L. W. Sung, G. Tsai, and H. H. Lin, “1.3m InGaAsN quantum well laser grown by plasma assisted gas source MBE,” Proceedings of 2002 IEDMS, pp. 37-40, Taipei, Taiwan, ROC, 2002
  167. D. K. Shih, H. H. Lin, and Y. F. Chen, “Raman scattering characterization of InAsN bulk film on (100) InP substrates,” Proceedings of 2002 IEDMS, pp. 43-46, Taipei, Taiwan, ROC, 2002
  168. P. W. Liu, M. H. Lee, J. R. Chen, and H. H. Lin, “Low-threshold ~1.3m GaAsSb quantum well laser,” Proceedings of 2002 IEDMS, pp. 125-128, Taipei, Taiwan, ROC, 2002
  169. F. Y. Chang, T. C. Wu, and H. H. Lin, “1.3m InAs/InGaAs quantum dot lasers grown by GSMBE,” Proceedings of 2002 IEDMS, pp. 236-239, Taipei, Taiwan, ROC, 2002
  170. C. M. Lai, F. Y. Chang, C. W. Chang, H. H. Lin, and G. J. Jan, “Optical characterization on InAs/GaAs quantum dots,” Proceedings of 2002 IEDMS, pp. 333-336, Taipei, Taiwan, ROC, 2002
  171. D. K. Shih, H. H. Lin, T. Y. Chu, and T. R. Yang, “InAsN Grown by Plasma-assisted Gas Source MBE,” 2001 MRS Fall meeting, Symposium H, H2.5, Boston, USA, Nov. 2001
  172. D. K. Shih, H. H. Lin, L. W. Sung, and T. Y. Chu, “Bulk InAsN Films Grown by Plasma-Assisted Gas Source Molecular Beam Epitaxy,” Proceeding of 13th Indium Phosphide and Related Materials, pp.555-558, Nara, Japan, 2001
  173. D. K. Shih, H. H. Lin, and Y. H. Lin, “Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE,” Middle Infrared Coherent Sources MICS’01 International Workshop, St. Petersburg, Russia, 2001
  174. L. W. Sung, H. H. Lin, and C. T. Chia, “V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE,” 2001 MRS Fall Meeting, I3.22, Boston, MA, USA, 2001
  175. M. H. Lee, P. W. Liu, and H. H. Lin, “Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well,” 2001 Electron Devices and Materials Symposia, WB1-4, pp. 118-1, KaoHsiung, Taiwan, ROC, 2001
  176. T. Y. Chu, D. K. Shih, and H. H. Lin, “On the InAs(N)/InGaAs quantum wells,” 2001 Electronics Devices and Materials Symposia, WB1-6, pp.126-12, Kaohsiung, Taiwan, ROC, 2001
  177. L. W. Sung, H. H. Lin, and C. T. Chia, “Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE,” Proceeding of Optics and Photonics Taiwan, TA3-1, pp. 41-43, Kaohsiung, Taiwan, ROC, 2001
  178. D. K. Shih, H. H. Lin, and Y. H. Lin, “Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE,” Proceeding of Optics and Photonics Taiwan’01, pp. 379-381, Kaohsiung, Taiwan, ROC, 2001
  179. P. W. Liu and H. H. Lin, “Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well,” Proceeding of Optics and Photonics Taiwan '01, pp. 441-443, Kaohsiung, Taiwan, ROC, 2001
  180. W. C. Wu, H. Wang, and H. H. Lin, “A fully integrated broadband amplifier with 161% 3-db bandwidth,” Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific, Vol. 1, pp. 291-, Taiwan, ROC, 2001
  181. H. C. Chiu, S. C. Yang, C. K. Lin, Y. J. Chan, and H. H. Lin, “In0.49Ga0.51P/ In0.15Ga0.85As doped-channel HFETs with low parasitic resistance by inserting a Si-doped layer,” 2000 topical workshop on heterostructure microelectronics, Nagoya, Aug. 2000
  182. S.C. Yang, S.C. Chiou, Y.-J. Chan, and H. H. Lin, “Selectively dry-etched In0.49Ga0.51P/ In0.15Ga0.85As double doped-channel FETs using CHF3+BCl3 plasma,” 12th international conference on InP and related material, Williamsburg, Virginia, USA, May 2000
  183. J. S. Wang, H. H. Lin, L. W. Sung and G. R. Chen, “Growth and characterization of InAsN alloys,” 12th international conference on InP and related material, Williamsburg, Virginia, USA, May 2000
  184. H. H. Lin, “InAsN grown by gas source molecular beam epitaxy,” The 4th Seminar on Science and Technology (ROC-Japan Exchange Program) -- Conference on Nitride Semiconductor Materials and Devi, Tokyo, Japan, Mar. 2000
  185. L. W. Sung, H. H. Lin, “Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE,” International Photonics Conference 2000, pp. 208-211, Hsinchu, Taiwan, 2000
  186. D. K. Shih, H. H. Lin, T. Y. Chu, and T. R. Yang, “Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy,” International Photonics Conference 2000, pp. 212-216, Hsinchu, Taiwan, 2000
  187. D. K. Shih and H. H. Lin, “InAsN grown by GSMBE,” 2000 International Electron Devices and Materials Symposia, pp. 62-65, Chung-Li, Taiwan, 2000
  188. L. W. Sung, H. H. Lin, “Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE,” 2000 International Electron Devices and Materials Symposia, pp. 66-69, Chung-Li, Taiwan, 2000
  189. F. Y. Chang and H. H. Lin, “Anomalous photoluminescence of InGaP/GaAs quantum well grown by GSMBE,” 2000 International Electron Devices and Materials Symposia, pp. 99-102, Chung-Li, Taiwan, 2000
  190. C. W. Liu, M. H. Lee, C. F. Lin, I. C. Lin, W. T. Liu, and H. H. Lin, “Light emission and detection by metal oxide silicon tunneling diodes,” 1999 IEDM, Washington D. C., USA, Dec. 1999
  191. J. S. Wang, H. H. Lin, L. W. Sung, “InAsN quantum wells grown on InP by gas source MBE,” 3rd international conference on mid-infrared optoelectronics materials and devices, O21, Aachen, Germany, 1999
  192. L. W. Sung, J. S. Wang, H. P. Shiao, C. Y. Wang, I. F. Jang, T. T. Shih, Y. K. Tu, and H. H. Lin, “1.55m asymmetric coupled quantum well structure for laser-modulator integration,” 1999 Electron Devices and Materials Symposia, 3D04, Taoyuan, Taiwan, ROC, 1999
  193. J. S. Wang, G. R. Chen, L. W. Sung, and H. H. Lin, “InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy,” 1999 Electron Devices and Materials Symposia, 1C05, Taoyuan, Taiwan, ROC, 1999
  194. J. S. Wang, G. R. Chen, L. W. Sung, and H. H. Lin, “Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy,” Optics and Photonics/Taiwan'99, FR-III4-A-4, Chung-Li, ROC, 1999
  195. G. R. Chen, J. S. Wang, and H. H. Lin, “Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells,” Optics and Photonics/Taiwan'99, Chung-Li, FR-I6-A-8, ROC, 1999

Patents:

  1. 楊哲維、劉繼文、林浩雄、葉凌彥, “One-dimensional nanostructure growth on graphene and devices thereof,” 9,711,607 (美國專利), Jul. 2017
  2. 林浩雄、馬大鈞、林佑儒、王俊評、黃正宏, “環境光偵測器,” 中華民國，發明第 I 335075號, Dec. 2010
  3. H. H. Lin, T. C. Ma, Y. R. Lin, J. P. Wang, and C. H. Huang, “Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye,” U. S. Patent No. 7,538,406, May 2009
  4. 林浩雄、馬大鈞、吳俊逸, “類人眼之光偵測器,” 中華民國，發明第 I 287877, Oct. 2007
  5. 邱煥凱、林浩雄, “集總常數補償式高低通平衡至不平衡轉換器,” 中華民國發明專利，No. 139060, Jul. 2001
  6. 洪儒菘、林浩雄, “背靠背式雙波長半導體雷射元件,” 中華民國發明專利，No. 135640, Jun. 2001
  7. H. K. Chiou and H. H. Lin, “Lumped constant compensated high/low pass balanced-to-unbalanced transition,” U. S. Patent No. 6052039, Apr. 2000