Department of Electrical Engineering National Taiwan University

林浩雄 Lin, Hao-Hsiung

Professor, Department of Electrical Engineering, National Taiwan University

Ph.D. National Taiwan University, 1985
M.S. National Taiwan University, 1980
B.S. National Taiwan University, 1978

Office : EE2 419
TEL : +886-2-33663670
FAX : +886-2-23671909/2363
Email :
Office Hour : Thursday PM5:30~6:30, Friday AM8:00~9:00
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Major Research Areas

Compound semiconductor materials and devices based on molecular beam epitaxy

Research Summary

Our research field is mainly on the materials and devices of III-V compound semiconductor based on molecular-beam epitaxy (MBE) technology. Our first research project is the growth and characterization of dilute nitrides including GaAsSbN and InAsN. We have wide experiences on both materials. In 2002, we first demonstrated a 2.4 microns InAsN quantum well laser which possesses the longest wavelength among nitride lasers. We also have demonstrated GaAsSbN lattice-matched to GaAs and with a narrow energy gap of 0.8 eV.

Our second project is the growth and characterization of InAsPSb alloy. We are the first group to deposit this alloy using gas-source MBE. In this subject, we have a long collaboration work with Prof. Krier at Lancaster University (UK) since 2003. Recently, we worked on the determination of the electronic structure of ternary InAsSb, including the spin-oribit, fundamental gap and band offset. For details, please refer to our publication list.

Our third project is the heteroepitaxy of III-V compounds on patterned Si, which is supported by TSMC. The purpose is to explore the feasibility of replace the Si channel with III-V alloy.

Hao-Hsiung Lin (林浩雄) was born in Taichung, Taiwan, 1956. He received the B.S., M.S., and Ph.D degrees in electrical engineering from National Taiwan University, Taiwan in 1978, 1980, and 1985, respectively. During his Ph.D. work, he invented the emitter-thinning structure of heterojunction bipolar transistor (HBT), which is currently used in commercial HBTs. He has been with the Department of Electrical Engineering at National Taiwan University since 1980, and was promoted as a full professor in 1992. He was a visiting scholar at Stanford university, working on molecular beam epitaxy and deep-level transient spectroscopy, in 1985. From 2001 to 2004, he served as the vice chairman of the Department of Electrical Engineering, National Taiwan University. His research area is the molecular beam epitaxy (MBE) of III-V compound semiconductors. Besides the aforementioned HBT structure, he invented the first InAsN mid-infrared quantum well laser operating at 2.4 mm. His current research interests are on the MBE growth of dilute nitrides, mid-infrared semiconductors, and nano-hetero-epitaxy of compound semiconductors. Dr. Lin is a member of the Chinese Institute of Engineers and a senior member of IEEE.

Journal articles & book chapters Conference & proceeding papers Patents

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Journal articles & book chapters

1. Y. C. Wei, C. H. Chu, M. H. Mao, Y. R. Lin, and H. H. Lin, “A new method for direct extraction of ambipolar diffusion length in a thin film by scanning photoluminescence microscopy” , Jpn. J. Appl. Phys , Jan. 2024

2. D. N. Talwar, and H. H. Lin, “Negative thermal expansion coefficient of Al pnictides – A systematic realistic pressure-dependent lattice dynamical study” , Materials Science and Engineering: B , 2024

3. Z.C. Feng, J.M. Liu, D. Xie , M. T. Nafisa, C. W. Zhang , L.Y. Wan , B.B. Jiang , H. H. Lin , Z. R. Qiu, W. J. Lu , B. Klein , I. T Ferguson,and S. Y. Liu, “Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy” , Materials , 2024

4. Z. C. Feng, H. H. Lin, B. Xin, S. J. Tsai, V. Saravade, J. Yiin, B. Klein, I. T. Ferguson,, “Structural characteristics of 3C-SiC thin films grown on Si-face and C-face 4H-SiC substrates by high temperature chemical vapor deposition” , Vaccum , 2023

5. Y. C. Chen, R.H. Yan, H. C. Huang, L. H. Nieh, H. H. Lin, “Guard ring design to prevent edge breakdown in double-diffused planar InGaAs/InP avalanche photodiodes” , Materials , Feb. 2023

6. H. H. Lin, B. Xin, Z. C. Feng and I. T. Ferguson, “Cubic SiC grown on 4H SiC: Growth and structural properties.” , In Z. C. Feng (Ed.) Handbook of silicon carbide materials and devices , May 2023

7. Z. C. Feng, D. Xie, M. T. Nafisa, H. H. Lin, W. Lu, J. M. Chen, J. Yin, K. H. Chen, L. C. Chen, B. Klein, and I. T. Ferguson, “Optical surface and structural studies of InN thin films grown on sapphire by molecular beam epitaxy.” , J. Vac. Sci. Technol. , 2023

8. D. N. Talwar, and H. H. Lin, “Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy” , Applied Surface Science , Nov. 2023

9. D. N. Talwar, and H. H. Lin, “Systematic assessment of phonon and optical characteristics for gas-source molecular beam epitaxy-grown InP1-xSbx/n-InAs epifilms” , Crystals , Sep. 2023

10. D. N. Talwar, T. R. Yang, and H. H. Lin, “Phonon characteristics of gas-source molecular beam epitaxy-grown InAs1-xNx/InP (001) with identification of Si, Mg and C impurities in InAs and InN” , Crystals , Oct. 2023

11. C. H. Wu, C. Chou, and H. H. Lin, “Strain and atomic stacking of bismuth thin film in its quasi-van der Waals epitaxy on (111) Si substrate” , Scientific Reports , Nov. 2023

12. C. Chou, B. X Wu, and H. H. Lin, “Structural properties of Bi thin film grown on Si (111) by quasi-van der Waals epitaxy” , Scientific Reports , 2022

13. D. N. Talwar, and H. H. Lin, “Assessing site selectivity of Si-Ge in GaAs by isotopic dependent vibrational mode” , Mat. Sci. Eng. B , May 2022

14. D. N. Talwar, and H. H. Lin, “Assessing thermodynamical properties of Al1-xGaxSb alloys and optical modes for Al1-xGaxSb/GaAs epifilms and (AlSb)m/GaSb)n superlattices” , J. Vac. Sci. Technol. A , May 2022

15. D. N. Talwar, P. Becla, H. H. Lin, and Z. C. Feng, “Assessment of intrinsic and doped defects in Bridgman growth Cd1-xZnxTe alloys” , Mat. Sci. Eng. B , 2021

16. W. C. Hou, P. C. Shih, H. H. Lin, B. Wu, J. Y. Li, “High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls” , IEEE Trans. Electron Devices , 2021

17. L. C. Hong, C. Chou, and H. H. Lin, “Simulation on the electric field effect of Bi thin-film” , Solid State Electronics Letter , 2020

18. C. H. Chu, M. H. Mao, Y. R. Lin, and H. H. Lin, “A new fitting method for ambipolar diffusion length extraction in thin film structures using photoluminescence measurement with scanning excitation” , Scientific Reports , 2020

19. D. N. Talwar, H. H. Lin, and Z. C. Feng, “Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers” , Mat. Sci. Eng. B , 2020

20. H. P. Hsu, J. D. Wu, Y. J. Lin, Y. S. Huang, Y. R. Lin, and H. H. Lin, “Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques” , Jpn J. Appl. Physics , Vol. 54 , 091201-, Jan. 2015

21. Y. C. Lin, M. H. Mao, C. J. Wu, and H. H. Lin, “InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm” , Optics lett. , Vol. 40 , 1904-1907, Jan. 2015

22. H. P. Hsu, P. H. Wu, J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. H. Lin, and K. K. Tiong, “Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy” , Jpn J. Appl. Physics , Vol. 53 , 051201-, Jan. 2014

23. H. M. Wu, S. J. Tsai, Y. C. Chang, Y. R. Chen, and H. H. Lin, “Ordering InGaP epilayer grown on Ge substrate” , Thin Solid Films , Vol. 570 , 390-393, Jan. 2014

24. Y. C. Lin, M. H. Mao, Y. R. Lin, H. H. Lin, C. A. Lin, and L. A. Wang, “All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling” , Optics lett. , Vol. 39 , 4998-5001, Jan. 2014

25. K. I. Lin, K. L. Lin, B. W. Wang, H. H. Lin, and J. S. Huang, “Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation” , Appl. Phys. Express , Vol. vol. 6 , p. 121202-, Dec. 2013

26. J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. S. Tsai, and H. H. Lin, “Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure” , J. Luminescence , Vol. vol. 136 , pp. 178-181-, Apr. 2013

27. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy” , J. Physics D , Vol. vol. 46 , p. 035306-, Jan. 2013

28. D. N. Talwar, T. R. Yang, H. H. Lin, and Z. C. Feng, “Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)” , Appl. Phys. Lett. , Vol. vol. 102 , p. 052110-, Jan. 2013

29. H. H. Lin, C. L. Chiou, Y. T. Lin, T. C. Ma, J. S. Wu, and Z. C. Feng, “Short range structure of dilute nitride GaAsSbN” , in: Physics and Mechanics of New Materials and Their Applications, edited by I. A. Parinov and S. H. Chang , Vol. Ch. 10 , pp. 107-123-, Jan. 2013

30. Y. C. Chin, J. Y. Chen, B. H. Chen, H. S. Tsai, Y. S. Huang, and H. H. Lin, “Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs” , Appl. Phys. Lett. , Vol. vol. 101, issue 25 , p. 251910-, Dec. 2012

31. S. T. Lo, H. E. Lin, S.-W. Wang, H. D. Lin, Y. C. Chin, H. H. Lin, J. C. Lin, and C. T. Liang, “Electron transport in a GaPSb film” , Nanoscale Res. Lett. , Vol. vol. 7 , p. 640-, Nov. 2012

32. Y. C. Chin, H. H. Lin, and C. H. Huang, “InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction” , IEEE Electron Device Lett. , Vol. vol. 33, issue 3 , pp. 489-491-, Mar. 2012

33. H. P. Hsu, Y. T. Lin, and H. H. Lin, “Evidence of nitrogen reorganization in GaAsSbN alloys” , Jpn. J. Appl. Phys. , Vol. vol. 51 , p. 022605-, Jan. 2012

34. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy” , Thin solid film , Vol. vol. 520, issue 13 , pp. 4486-4492-, Jan. 2012

35. C. J. Wu, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs” , Appl. Phys. Lett. , Vol. vol. 101, issue 9 , p. 091902-, Aug. 2012

36. J.-W. Yu, P.-C. Yeh, S.-L. Wang, W.-R. Wu, M.-H. Mao, H. H. Lin, and L.-H. Peng, “Short channel effects on gallium nitride/gallium oxide nanowire transistors” , Appl. Phys. Lett. , Vol. vol. 101, issue 18 , p. 183501-, Oct. 2012

37. F. Cheng, T. Fa, S. Yao, C. J. Wu, H. H. Lin, and Z. C. Feng, “Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction” , J. Phys. D , Vol. vol. 406 , pp. 3219-3221-, Jan. 2011

38. T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy” , J. Crystal Growth , Vol. vol. 318, issue 1 , pp. 558-562-, Jan. 2011

39. K. J. Cheetham, A. Krier, I. Patel, J. S. Tzeng, and H. H. Lin, “Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE” , J. Phys. D , Vol. vol. 44, issue 8 , p. 085404-, Jan. 2011

40. J. M. Lin, L. C. Chou, and H. H. Lin, “Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells” , J. Vac. Sci. and Technol. B , Vol. vol. 29, issue 2 , p. 021011-, Jan. 2011

41. Y. W. Tai, C. C. Yang, M. H. Yang, C. S. Hong, H. H. Lin, and B. Z. Wan, “Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures” , J. Taiwan Inst. of Chem. Eng , Vol. vol. 42 , pp. 669-673-, Jan. 2011

42. H. P. Hsu, Y. S. Huang, Y. T. Lin, H. H. Lin, and K. K. Tiong, “Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy” , Mater. Chem. Phys. , Vol. vol. 124, issue 1 , pp. 558 -562-, Nov. 2010

43. Y. C. Chin, H. H. Lin, C. H. Huang, and M. N. Tseng, “InGaPSb/GaAs: its band offsets and application to heterojunction bipolar transistors” , Electron Device Lett. , Vol. vol. 31, issue 5 , pp. 434 - 436-, May 2010

44. Y. T. Lin, T. C. Ma, H. H. Lin, J. D. Wu, and Y. S. Huang, “Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN” , Appl. Phys. Lett. , Vol. vol. 96, no. 01 , 011903-, Jan. 2010

45. S. P. Wang, T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN” , International J. of Electrical Eng. , Vol. vol. 16, no. 4 , pp. 319-326-, Aug. 2009

46. Y. R. Lin, H. H. Lin, and J. H. Chu, “GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer” , Electronics lett. , Vol. vol. 45, issue 13 , pp. 682-683-, Jun. 2009

47. P. Sitarek, H. P. Hsu, Y. S. Huang, J. M. Lin, H. H. Lin, and K. K. Tiong, “Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures” , J. Appl. Phys. , Vol. vol. 105, no. 12 , 123523-, Jun. 2009

48. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures” , Appl. Phys. Lett. , Vol. vol. 94, no. 21 , 211906-, Jun. 2009

49. H. P. Hsu, Y. N. Huang, Y. S. Huang, Y. T. Lin, T. C. Ma, H. H. Lin, K. K. Tiong, P. Sitarek, and J. Misiewicz, “Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,” , Phys. Stat. Sol. A , Vol. vol. 206, no. 5 , pp. 830-835-, May 2009

50. Y. R. Lin, Y. F. Lai, C. P. Liu, and H. H. Lin, “GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer” , Appl. Phys. Lett. , Vol. vol. 94, no. 11 , 111106-, Mar. 2009

51. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Energy gap reduction in GaAsSbN” , Appl. Phys. Lett. , Vol. vol 93, no. 17 , 171914-, Oct. 2008

52. Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics” , Appl. Phys. Lett. , Vol. vol. 93, no. 12 , 121903-, Sep. 2008

53. S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai, “Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance” , Thin Solid Films , Vol. vol. 516, issue 22 , pp. 8049-8058-, Sep. 2008

54. T. C. Lin, T. C. Ma and H. H. Lin, “Design and fabrication of AlGaAs ambient light detectors” , IEEE Photonic Tech. Lett. , Vol. Vol. 20, No. 16 , 1429-1431-, Aug. 2008

55. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence of InAs0.04P0.67Sb0.29” , J. Appl. Phys. , Vol. Vol. 104 , 023535-, Jul. 2008

56. K. Y. Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, L. H. Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, J. Y. Wu, and S. D. Lin, “Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems” , J. Physics: Condensed Matter , Vol. Vol. 20, No. 9 , 295223-, Jul. 2008

57. H. P. Hsu, Y. N. Huang, Y. S. Huang, Y. T. Lin, T. C. Ma, H. H. Lin, K. K. Tiong, P. Sitarek, and J. Misiewicz, “Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy” , J. Appl. Phys. , Vol. Vol. 103 , 113508-, Jun. 2008

58. T. C. Ma, Y. T. Lin, and H. H. Lin, “Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy” , J. of Crystal Growth , Vol. Vol. 310 , 2854-2858-, May 2008

59. J. R. Lee, C. R. Lu, H. L. Liu, H. H. Lin, and L. W. Sung, “Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures” , Phys. Stat. Sol. (c) , Vol. Vol. 5, No. 9 , 3054-3056-, May 2008

60. T. S. Wang, J. T. Tsai, K. I. Lin, J. S. Hwang, H. H. Lin, and L. C. Chou, “Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells” , Materials Science and Engineering B , Vol. 147 , 131-135-, Feb. 2008

61. C. Y. Chen, J. R. Lee, C. R. Lu, L. W. Sun, and H. H. Lin, “Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers” , J. Phys. and Chem. Solids , Vol. Vol. 69 , 493-496-, Feb. 2008

62. C. H. Chan, C. H. Lee, Y. S. Huang, J. S. Wang, and H. H. Lin, “Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy” , J. Appl. Phys. , Vol. Vol. 101 , 103102-, May 2007

63. G. Tsai, D. L. Wang, C. E. Wu, C. J. Wu, Y. T. Lin, and H. H. Lin, “InAsPSb quaternary alloy grown by gas source molecular beam epitaxy” , J. of Crystal Growth , Vol. Vol.301-302 , pp.134-138-, Apr. 2007

64. S. A. Cripps, T. J. C. Hosea, A. Krier, V. Smirnov, P. J. Batty, Q. D. Zhuang, H. H. Lin, P. W. Liu, and G. Tsai,, “Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy” , Appl. Phys. Lett. , Vol. Vol. 90 , 172106-, Apr. 2007

65. J. S. Hwang, H. C. Lin, C. K. Chang, T. S. Wang, L. S. Chang, J. I. Chyi, W. S. Liu, S. H. Chen, H. H. Lin, and P. W. Liu, “The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures” , Optics Express , Vol. Vol. 15, No. 8 , pp. 5120-5125-, Apr. 2007

66. H. S. Fan, Y. S. Su, F. H. Chu, F. Y. Chang, H. H. Lin, and C. F. Lin, “Opposite temperature effects of quantum-dot laser under dual-wavelength operation” , Appl. Phys. Lett. , Vol. Vol. 90 , 181113-, Apr. 2007

67. C. H. Lin, W. W. Pai, F. Y. Chang, and H. H. Lin, “Comparative study of InAs quantum dots with different InGaAs capping methods” , Appl. Phys. Lett. , Vol. 90 , 063102-, Feb. 2007

68. H. P. Hsu, P. Sitarek, Y. S. Huang, P. W. Liu, H. H. Lin, and K. K. Tiong, “Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells” , Phys. Stat. Sol. (a) , Vol. Vol. 204, No. 2 , 430-438-, Feb. 2007

69. J. S. Wang, S. H. Yu, Y. R. Lin, H. H. Lin, C. S. Yang, T. T. Chen, Y. F. Chen, G. W. Shu, J. L. Shen, R. S. Hsiao, J. F. Chen, and J. Y. Chi, “Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures” , Nanotechnology , Vol. 18 , 015401-, Jan. 2007

70. C. F. Huang, Y. H. Chang, H. H. Cheng, Z. P. Yang, H. D. Yeh, C. H. Hsu, C. T. Liang, D. R. Hang, and H. H. Lin, “An experimental study on Gamma(2) modular symmetry in the quantum Hall system with a small spin splitting” , J. Phys: Condens. Matter , Vol. 19 , 026205-, Jan. 2007

71. T. T. Chen, C. L. Cheng, Y. F. Chen, F. Y. Chang, H. H. Lin, C. T. Wu, and C. H. Chen, “Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies” , Phys. Review B , Vol. 75 , 033310-, Jan. 2007

72. Y. C. Wen, L. C. Chou, H. H. Lin, V. Gusev, K. H. Lin, and C. K. Sun, “Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects” , Appl. Phys. Lett. , Vol. Vol. 90 , 172102-, Apr. 2007

73. L. C. Chou, Y. R. Lin, C. T. Wan, and H. H. Lin, “[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy” , Microelectronics Journal , Vol. 37 , 1511-1514-, Dec. 2006

74. Y. C. Wen, K. H. Lin, T. F. Kao, L. C. Chou, H. H. Lin, and C. K. Sun, “Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics” , J. of Applied Phys. , Vol. 100 , 103516-, Nov. 2006

75. P. W. Liu, G. Tsai, H. H. Lin, A. Krier, Q. D. Zhuang, and M. Stone, “Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy” , Appl. Phys. Lett. , Vol. 89 , 201115-, Nov. 2006

76. C. S. Lee, F. Y. Chang, D. S. Liu, and H. H. Lin, “InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer” , Jpn. J. of Applied Phys. , Vol. Vol. 45, No. 8A , 6271-6274-, Aug. 2006

77. A. Krier, M. Stone, Q. D. Zhuang, P. W. Liu, G. Tsai, and H. H. Lin, “Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes” , Appl. Phys. Lett. , Vol. 89 , 091110-, Aug. 2006

78. H. P. Hsu, P. Sitarek, Y. S. Huang, P. W. Liu, J. M. Lin, H. H. Lin, and K. K. Tiong, “Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells” , J. of Physics: Condensed Matter , Vol. Vol. 18 , 5927-5935-, Jul. 2006

79. C. R. Lu, H. L. Liu, J. R. Lee, C. H. Wu, H. H. Lin, and L. W. Sung, “Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers” , J. of Physics and Chemistry of Solids , Vol. Vol. 66 , 2082-2085-, Nov. 2005

80. W. T. Chu, H. H. Lin, Y. H. Wang, C. T. Hsieh, Y. T. Lin, C. S. Wang, “Performance evaluation of field-enhanced p-channel split-gate flash memory” , IEEE Electron Device Lett. , Vol. Vol 26(9) , 670-672-, Sep. 2005

81. H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih, and H. H. Lin, “Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents” , Appl. Phys. Lett. , Vol. Vol. 87 , 081908-, Aug. 2005

82. W. T. Chu, H. H. Lin, H. C. Sung, Y. H. Wang, Y. T. Lin, C. H. Wang, “Shrinkable triple self-aligned field-enhanced split-gate flash memory” , IEEE Trans. on Electron Device , Vol. Vol. 51 (10) , 1667-1671-, Oct. 2004

83. W. T. Chu, H. H. Lin, W. L. Tu, Y. H. Wang, C. T. Hsieh, H. C. Sung, Y. T. Lin, C. S. Tsai and C. S. Wang, “Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory” , IEEE Electron Device Lett. , Vol. EDL-25 (9) , 616-618-, Sep. 2004

84. M.-H. Mao, T.-Y. Wu, D.-C. Wu, F.-Y. Chang, and H.-H. Lin, “Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers” , Optical and Quantum Electronics , Vol. Vol. 36 (10) , 927-933-, Aug. 2004

85. W. T. Chu, H. H. Lin, Y. H. Wang, C. T. Hsieh, H. C. Sung, Y. T. Lin, and C. S. Wang, “High SCR design for one-transistor split-gate full-featured EEPROM” , IEEE Electron Device Lett. , Vol. EDL-25 (7) , 498-500-, Jul. 2004

86. T. S. Lay, W. T. Kuo, L. P. Chen, Y. H. Lai, H. Hung, J. S. Wang, J. Y. Chi, D. K. Shih, and H. H. Lin, “Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy” , J. Vac. Sci. Technol. B , Vol. Vol. 22 (3) , 1491-1494-, Jun. 2004

87. T. T. Chen, W. S. Su, Y. F. Chen, P. W. Liu, and H. H. Lin, “Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells” , Appl. Phys. Lett. , Vol. Vol. 85 (9) , 1526-1528-, Jun. 2004

88. Y.-M. Chang, H. H. Lin, C. T. Chia, and Y. F. Chen, “Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells” , Appl. Phys. Lett. , Vol. Vol. 84 (14) , 2548-2550-, Apr. 2004

89. D. R. Hang, D. K. Shih, C. F. Huang, W. K. Hung, Y. H. Chang, Y. F. Chen and H. H. Lin, “Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Subnikov de-Haas oscillation” , Physica.E , Vol. 22 , 308-311-, Apr. 2004

90. P. W. Liu, G. H. Liao, and H. H. Lin, “1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy” , Electronics Lett. , Vol. Vol. 40 (3) , 177-178-, Feb. 2004

91. F. Y. Chang, J. D. Lee, and H. H. Lin, “Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy” , Electronics Lett , Vol. Vol. 40 (3) , 179-180-, Feb. 2004

92. C. M. Lai, F. Y. Chang, H. H. Lin, and G. J. Jan, “Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy” , Jpn. J. Appl. Phys , Vol. Vol. 43 (2) , 735-738-, Feb. 2004

93. D. K. Shih, H. H. Lin, and Y. H. Lin, “Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared lasers applications” , IEE Proceedings – Optoelectronics , Vol. Vol. 150, No. 3 , pp. 253-258-, Jun. 2003

94. C. M. Lai, F. Y. Chang, C. W. Chang, C. H. Kao, H. H. Lin, G. J. Jan, and J. Lee, “Temperature dependence of photoreflectance in InAs/GaAs quantum dot” , Appl. Physics. Lett , Vol. Vol. 82, No. 22 , pp. 3895-3897-, Jun. 2003

95. T. T. Chen, C. H. Chen, W. Z. Cheng, W. S. Su, M. H. Ya, Y. F. Chen, P. W. Liu, and H. H. Lin, “Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells” , J. Appl. Physics , Vol. Vol. 93, No.12 , pp. 9655-9658-, Jun. 2003

96. L. W. Sung, and H. H. Lin, “Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers” , Appl. Physics. Lett , Vol. Vol. 83, No. 6 , pp. 1107-1109-, Jun. 2003

97. G. R. Chen, H. H. Lin, J. S. Wang and D. K. Shih, “Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy” , J. Electronic Mat , Vol. Vol. 32, No. 4 , pp. 244-248-, Apr. 2003

98. F. Y. Chang, C. C. Wu, and H. H. Lin, “Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers” , Appl. Physics. Lett , Vol. Vol. 82, No. 25 , pp. 4477-4479-, Apr. 2003

99. D. K. Shih, H. H. Lin, L. W. Sung, T. Y. Chu, and T. R. Yang, “Band Gap Reduction in InAsN Alloys” , Jpn. J. Appl. Physic , Vol. Vol. 42 , pp. 375-383-, Feb. 2003

100. J-S. Hwang, M-F. Chen, K-I Lin, C-N. Tsai, W-C. Hwang, W-Y.Chou, H. H. Lin, and M. C. Chen, “Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance” , Jpn. J. Appl. Phys , Vol. Vol. 42 , pp. 5876-5879-, Feb. 2003

101. C. M. Lai, F. Y. Chang, H. H. Lin, an G. J. Jan, “A study of optical properties of InGaAs/GaAs quantum dots” , J. of the Korean Physical Society , Vol. Vol. 42 , pp. S114-S119-, 2003

102. C. M. Lai, F. Y. Chang, H. H. Lin, an G. J. Jan, “A study of optical properties of InGaAs/GaAs quantum dots” , J. of the Korean Physical Society , Vol. Vol. 42 , pp. S114-S119-, Jan. 2003

103. P. W. Liu, M. H. Lee, H. H. Lin, and J.-R. Chen, “Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy” , Electronics Lett , Vol. Vol. 38 (22) , pp. 1355-1356-, Oct. 2002

104. Y. S. Chiu, M. H. Ma, W. S. Su, T. T. Chen, Y. F. Chen, and H. H. Lin, “Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb quantum wells induced by interface chemical bonds” , Appl. Physics. Lett , Vol. Vol. 81, No.26 , pp. 4943-4945-, Oct. 2002

105. D. R. Hang, C. F. Huang, W. K. Hung, Y. H. Chang, J. C. Chen, H. C. Yang, Y. F. Chen, D. K. Shih, T. Y. Chu, and H. H. Lin, “Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well” , Semicond. Sci. Technol , Vol. 17 , pp. 999-1003-, Aug. 2002

106. C. T. Lee, H. Y. Lee, and H. H. Lin, “Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers” , Jpn. J. Appl. Physic , Vol. Vol. 41 , pp. 5937-5940-, Jul. 2002

107. Y. Y. Ke, M. H. Ya, Y. F. Chen, J. S. Wang, and H. H. Lin, “Photoluminescence study of hydrogen passivation in InAsxN1-x/InGaAs single quantum well on InP” , Appl. Phys. Lett , Vol. Vol. 80 (19) , pp. 3539-3541-, May 2002

108. L. W. Sung, H. H. Lin, and C. T. Chia, “Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE” , J. Crystal Growth , Vol. Vol. 241(3) , pp. 320-324-, Mar. 2002

109. W. K. Hung, K. S. Cho, M. Y. Chem, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, and T. R. Yang, “Nitrogen induced enhancement of the electron effective mass in InAsxN1-x” , Appl. Phys. Lett , Vol. Vol. 80 (5) , pp. 796-799-, Feb. 2002

110. W. C. Wu, H. Wang, and H. H. Lin, “GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs” , Electronics Lett , Vol. Vol.38, No.4 , pp. 185-186-, Feb. 2002

111. S. C. Yang, H. C. Chiu, Y.-J. Chan, H. H. Lin, J.-M. Kuo, “(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications” , IEEE Trans. on Electron Devices , Vol. Vol. 48 No. 12 , pp. 2906-2910-, Dec. 2001

112. J. S. Wang, H. H. Lin, L. W. Sung, and G. R. Chen, “Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy” , J. Vac. Sci. Technol. B , Vol. Vol. 19(1) , pp. 202-206-, Oct. 2001

113. Ding-Kang Shih, H. H. Lin, and Y. H. Lin, “InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m” , Electronics Lett , Vol. Vol. 37, No. 22 , pp. 1342-1343-, Oct. 2001

114. H. C. Chiu, S. C. Yang, Y. J. Chan, and H. H. Lin, “High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs” , IEICE Trans. Electron. , Vol. Vol. E84-C, No. 10 , pp. 1312-1317-, Oct. 2001

115. G. R. Chen, H. H. Lin, J. S. Wang, and D. K. Shih, “Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells” , J. of Appl. Physics. , Vol. Vol. 90 , pp. 6230-6235-, Sep. 2001

116. C. H. Lee, Y. H. Chang, C. F. Huang, M. Y. Huang, H. H. Lin, and C. P. Lee, “Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells” , Chinese Journal of Physics , Vol. Vol. 39, No. 4 , pp. 363-368-, Aug. 2001

117. R. M. Lin, S. C. Lee, H. H. Lin, Y. T. Dai, and Y. F. Chen, “Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice” , J. of Crystal Growth , Vol. Vol. 227 , pp.1034-1038-, Jul. 2001

118. C. A. Chang, C. Z. Wu, P. Y. Wang, X. J. Guo, Y. T. Wu, C. Y. Liang, F. C. Hwang, W. C. Jiang, F. J. Lay, L. W. Sung, and H. H. Lin, “Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy” , J. of Crystal Growth , Vol. Vol. 225 (2-4) , pp.550-555-, May 2001

119. C. F. Huang, Y. H. Chang, C. H. Lee, H. D. Yeh, C.-T. Liang, Y. F. Chen, H. H. Lin, H. H. Cheng, and G. J. Hwang, “Insulator-quantum Hall conductor transitions at low magnetic field” , Physical Review B , Vol. Vol. 65, No. 16 , pp. 045303-1 –-, May 2001

120. C. T. Lee, K. C. Shyu, I. J. Lin, and H. H. Lin, “GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer” , Materials Science and Engineering , Vol. B74 , pp. 147-150-, Mar. 2000

121. J. C. Fan, W. K. Hung, Y. F. Chen, J. S. Wang, and H. H. Lin, “Mechanism for photoluminescence in an InyAs1–yN/InxGa1–xAs single quantum well” , Physical Review B , Vol. Vol. 62, No. 16 , pp. 10990-10994-, Jan. 2000

122. J. S. Liu, J. S. Wang, K. Y. Hsieh, H. H. Lin, “Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy” , J. Crystal Growth , Vol. Vol. 206 , pp. 15-22-, Jan. 1999

123. J. S. Wang and H. H. Lin, “Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy” , J. Vac. Sci. Technol. B , Vol. Vol. 17 , pp. 1997-2000-, Jan. 1999

124. J. C. Fan, Y. F. Chen, D. Y. Lin, Y. S. Huang, M. C. Chen, and H. H. Lin, “Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance” , J. Appl. Phys , Vol. Vol. 86 (3) , pp. 1460-1462-, Jan. 1999

125. K. T. Tsen, D. K. Ferry, J. S. Wang, C. S. Huang and H. H. Lin, “Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy” , Physica B: Condensed Matter , Vol. Volume 272, Issues 1-4 , pp. 416-418-, Jan. 1999

126. D. N. Talwar, H. H. Lin, and Z. C. Feng, “Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers” , Mat. Chem. Phys. , 0000

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Conference & proceeding papers:

1. S. Z. Zhang, C. C Yang, and H. H. Lin, “Growth and relaxation behaviors of GaAsBi on (001) GaAs” , IEDMS 2024 , Taichung, Taiwan , 2024

2. C. C. Yang, S. J. Tsai, and H. H. Lin, “GaAsBi grown on GaAs with a Bi mole fraction up to 13.5%” , IEDMS 2023 , Kaohsiung, Taiwan , 2023

3. C. Chou and H. H. Lin, “Nearly twinning-free bismuth film grown on c-Plane Sapphire Substrate” , IEDMS 2023 , Kaohsing, Taiwan , 2023

4. C. Chou, K. R. Weng, and H. H. Lin, “Dry Transfer and Structural Properties of Bismuth Thin Film Grown on Si(111)” , IEDMS 2023 , Kaohsing, Taiwan , 2023

5. L. C. Tsai, C. Chou, and H. H. Lin, “Transport Properties of Bismuth Nanowires” , IEDMS 2023 , Kaohsing, Taiwan , 2023

6. S. Z. Zhang, C. C Yang, and H. H. Lin, “MBE growth of GaAsBi nanowires on GaAs (111)A substrates” , IEDMS 2023 , Kaohsiung, Taiwan , 2023

7. S. J. Tsai, C. C. Yang, C. Chou, and H. H. Lin, “MBE Growth of GaAsBi on Bi/(111)Si and (111)A GaAs” , IEDMS 2022 , Nantou, Taiwan , 2022

8. C. H. Wu, C. Chou, and H. H. Lin, “Structural properties of ~10-nm-thick Bismuth thin film grown on (111) Si by quasi-van-der-Waals-epitaxy” , IEDMS 2022 , Nantou, Taiwan , 2022

9. C. Chou, C. H. Wu, and H. H. Lin, “Growth of (0001)-textured bismuth nanofilm on SiO2 by MBE” , IEDMS 2022 , Nantou, Taiwan , 2022

10. Z. Y. Huang, C. Chou, and H. H. Lin, “Study on the Schottky Barrier Height of Au/Bi/p-Si junction” , IEDMS 2022 , Nantou, Taiwan , 2022

11. S. J. Tsai, G. L. Peng, and H. H. Lin, “Infrared GaAsBi Grown on GaAs by Molecular Beam Epitaxy” , 15th MIODM, International Conference on Mid-Infrared Optoelectronic Materials and Devices , Guildford, U.K. , 2021

12. L. C. Hung, C. Chou, C. C. Chen, and H. H. Lin, “Quantization effect on the magnetotransport in textured Bi (0003) Nanofilms” , IEDMS 2021 , Tainan, Taiwan , 2021

13. C. C. Chen, C. Chou, L. C. Hung, and H. H. Lin, “Abnormal Hall effect in bismuth thin film” , IEDMS 2021 , Tainan, Taiwan , 2021

14. R. H. Yan, H. C. Huang, and H. H. Lin, “Double-Diffusion Plannar InGaAs/InP Avalanche Photodiode with Attached Guard Ring and Floating Guard Ring” , IEDMS 2021 , Tainan, Taiwan , 2021

15. S. J. Tsai, G. L. Peng, and H. H. Lin, “Growth model of GaAsBi alloy by molecular beam epitaxy” , IEDMS 2021 , Tainan, Taiwan , 2021

16. S. J. Tsai, G. L. Peng, and H. H. Lin, “Coherently strained GaAsBi alloys grown on GaAs by MBE” , OPTIC 2021 , Kaohsing, Taiwan , 2021

17. L. H. Nieh, Y. L. Kao, and H. H. Lin, “SWIR photodetector for light scanning” , IEDMS 2020 , New Taipei City, Taiwan , 2020

18. B. X. Wu, and H. H. Lin, “Effect of bond distortion on the X-ray diffraction of highly mismatched InPSb alloy” , IEDMS 2020 , New Taipei City, Taiwan , 2020

19. S. J. Tsai, G. L. Peng, and H. H. Lin, “MBE growth of highly mismatched GaAsBi on GaAs” , IEDMS 2020 , New Taipei City, Taiwan , 2020

20. C. C. Lu, C. Chou, and H. H. Lin, “Observation of weak anti-localization in a bismuth thin film grown by MBE” , OPTIC 2020, Optics & Photonics Taiwan, the International Conference 2020 , Taipei, Taiwan , 2020

21. Y. Xiao, C. Chou, and H. H. Lin, “Effect of thermal annealing on the structural and transport properties of bismuth thin films” , OPTIC 2020, Optics & Photonics Taiwan, the International Conference 2020 , Taipei, Taiwan , 2020

22. R. H. Yang, and H. H. Lin, “Effect of attached guard ring on the breakdown voltage of SAGCM InGaAs/InP avalanche photodiode” , OPTIC 2020, Optics & Photonics Taiwan, the International Conference 2020 , Taipei, Taiwan , 2020

23. Yen-Cheng Ko, Ding-Lun Wu, Che-Wei Yang, and Hao-Hsiung Lin, “Reactive-Ion Etching of Bismuth Thin Film Using CHF3” , International Electron Devices & Materials Symposium IEDMS2018 , Keelung, Taiwan, ROC , 2018

24. Xinyou Liu, Yen-Cheng Ko, Chieh Chou and Hao-Hsiung Lin, “Electrical Properties of Bismuth Thin Films Analyzed by Transmis-sion Line method” , International Electron Devices & Materials Symposium IEDMS2018 , Keelung, Taiwan, ROC , 2018

25. Hao-Kai Hsieh1, Chieh Chou1, Hao-Hsiung Lin*,1,2,3, Jiunn-Jye Luo4, and Shao-Yi Li4, “Strain relaxation properties of InAsyP1-y metamorphic buffer layers for SWIR InGaAs photodetector” , IEEE 2018次世代電子元件國際研討會 (ISNE 2018) , 集思北科大會議中心台北 , May 2018

26. C. Y. Tsai, M. C. Liu, Y. C. Chin, Z. C. Feng, and H. H. Lin, “Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure” , 21th Symposium on nano device technology , Hsinchu, Taiwan , May 2014

27. Y. H. Lin, S. C. Chen, Y. R. Chen, and H. H. Lin, “Structural properties of GaAsSb grown on (111)B GaAs” , 21th Symposium on nano device technology , Hsinchu, Taiwan , May 2014

28. Y. C. Lin, M. H. Mao, C. J. Wu, and H. H. Lin, “Mid-infrared whispering gallery mode emission from InAsSb/InAsPSb multiple quantum wells in a disk cavity” , MIOMD 2014 infrared optoelectronics: materials and devices , Montpellier, France , Oct. 2014

29. C. Y. Tsai, W. C. Chen, P. H. Chang, C. I. Wu, and H. H. Lin, “Band discontinuity in InAsPSb alloy system,” , MIOMD 2014 infrared optoelectronics: materials and devices , Montpellier, France , Oct. 2014

30. S. C. Chen, Y. H. Lin, and H. H. Lin, “Study of twin defects in (111)B GaAsSb by X-ray diffraction” , IEDMS 2014, international electron devices and materials symposium , Hualien, Taiwan , Nov. 2014

31. T. H. Huang, W. C. Chen, K. C. Chen, and H. H. Lin, “Effect of focued ion beam imaging process on the crystallinity of InAs” , IEDMS 2014, international electron devices and materials symposium , Hualien, Taiwan , Nov. 2014

32. F. W. Pranoto, C. Y. Tsai, Y. C. Liao, L. C. Chen, K. H. Chen, H. H. Lin, and Z. C. Feng, “Photoluminescence and Raman scattering of degenerate InN” , OPTIC 2014, optics and photonics Taiwan, international conference 2014 , Taichung, Taiwan , Dec. 2014

33. M. C. Liu, Z. C. Feng, and H. H. Lin, “X-ray absorption near edge structure of silicon in indium arsenide” , OPTIC 2014, optics and photonics Taiwan, international conference 2014 , Taichung, Taiwan , Dec. 2014

34. T. H. Huang, W. C. Chen, K. C. Chen, and H. H. Lin, “Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer” , OPTIC 2014, optics and photonics Taiwan, international conference 2014 , Taichung, Taiwan , Dec. 2014

35. C. Y. Tsai, B. Xin, Z. C. Feng, Y. M. Zhang, R. X. Jia, and H. H. Lin, “Polarized Raman spectroscopy of 3C-SiC film grown on 4H-SiC substrate” , OPTIC 2014, optics and photonics Taiwan, international conference 2014 , Taichung, Taiwan , Dec. 2014

36. B. W. Wang, C. J. Hong-Liao, H. H. Lin, and Z. C. Feng, “Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering” , IEDMS 2013, international electron devices and materials symposium , Nantou, Taiwan , Nov. 2013

37. C. Y. Tsai, Y. C. Chin, and H. H. Lin, “Raman spectroscopy of GaAsPSb alloys” , IEDMS 2013, international electron devices and materials symposium , Nantou, Taiwan , Nov. 2013

38. H. M. Wu, Y. J. Yang, and H. H. Lin, “Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate” , TACT 2013 international thin films conference , Taipei, Taiwan , Oct. 2013

39. Y. R. Chen, and H. H. Lin, “Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs” , 40th international symposium on compound semiconductors (ISCS 2013) , Kobe, Japan , May 2013

40. Y. C. Chin, H. H. Lin, H. S. Guo, and C. H. Huang, “GaAsPSb and its application to heterojunction bipolar transistors” , 40th international symposium on compound semiconductors (ISCS 2013) , Kobe, Japan , May 2013

41. C. X. Wang, Y. T. He, M. T. Niu, J. Y. Yao, E. Jones, Z. R. Qiu, X. Zhang, H. H. Lin, and Z. C. Feng, “Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes” , IEDMS 2013, international electron devices and materials symposium , Nantou, Taiwan , Nov. 2013

42. C. X. Wang, F. D. Li, S. C. Wang, M. Zhu, X. Zhang, H. H. Lin, and Z. C. Feng, “Properties of Variable Al Content of AlGaN Layers Grown by MOCVD” , OPTIC 2013, optics and photonics Taiwan, international conference 2013 , Zhongli, Taiwan , Dec. 2013

43. J. Wu, Y. T. Lin and H. H. Lin, “Defects probing by temperature dependence Raman scattering of GaAsSbN” , IEDMS 2012, international electron devices and materials symposium , Kao-hsiung, Taiwan , Dec. 2012

44. H. M. Wu, S. J. Tsai, H. I. Ho, H. H. Lin, and Y. J. Yang, “A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells” , IEDMS 2012, international electron devices and materials symposium , Kaohsiung, Taiwan , Dec. 2012

45. S. H. Li, C. J. Wu and H. H. Lin, “Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution” , IEDMS 2012, international electron devices and materials symposium , Kaohsiung, Taiwan , Dec. 2012

46. W. C. Chen, L. H. Chen, Y. T. Lin and H. H. Lin, “Structural properties of InAs nanowires grown by GSMBE” , IEDMS 2012, international electron devices and materials symposium , Kaohsiung, Taiwan , Dec. 2012

47. W. C. Chen, L. H. Chen, Y. T. Lin, and H. H. Lin, “Slanted InAs nanowires gorwn by GSMBE” , OPTIC 2012, optics and photonics Taiwan, international conference 2012 , Taipei, Taiwan , Dec. 2012

48. C. L. Chiou, Z. C. Feng, and H. H. Lin, “Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopy” , OPTIC 2012, optics and photonics Taiwan, international conference 2012 , Taipei, Taiwan , Dec. 2012

49. H. H. Lin, “Sb-based zincblende alloys with strong structural disorder” , Indo-Taiwan workshop on nanodevices , Bangalore, India , Nov. 2012

50. H. H. Lin, C. L. Chiou, Y. T. Lin, T. C. Ma, J. S. Wu, and Z. C. Feng, “Short range structure of dilute nitride GaAsSbN” , Russia-Taiwanese Symposium, Physics and mechanics of new materials and their applications , Rostov-on-Don, Russia , Jun. 2012

51. C. J. Wu, G. T. Chen, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “Study on the structural properties of InP0.52Sb0.48 on GaAs” , 2012 Taiwan MBE Conference , Tainan, Taiwan , May 2012

52. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Structural properties of GaAsSb grown on GaAs” , 2012 Taiwan MBE Conference , Tainan, Taiwan , May 2012

53. G. T. Chen, C. J. Wu, Z. C. Feng, and H. H. Lin, “Study on the lattice structure of InAsPSb grown on GaAs” , 2012 Taiwan MBE Conference , Tainan, Taiwan , May 2012

54. L. H. Chen, Y. T. Lin, and H. H. Lin, “MBE growth of InAs nanowires on Si” , 2012 Taiwan MBE Conference , Tainan, Taiwan , May 2012

55. C. J. Wu, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “Study on the structural properties of InP0.52Sb0.48 on GaAs” , MIOMD-XI, infrared optoelectronics: materials and devices , Chicago, USA , Oct. 2012

56. C. J. Wu, K. T. Chen, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “X-ray absorption find structures of InPSb alloys” , International photonics conference 2011 (IPC2011) , Tainan, Taipei , Dec. 2011

57. C. J. Wu, K. T. Chen, Z. C. Feng, and H. H. Lin, “Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy” , 2011 International electron devices and materials symposia , Taipei, Taiwan , Nov. 2011

58. Y. T. Lin, J. S. Wu, Z. C. Feng, and H. H. Lin, “Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy” , 2011 International electron devices and materials symposia , Taipei, Taiwan , Nov. 2011

59. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Structural properties of (111)B GaAsSb grown on GaAs substrates” , 18th American conference on crystal growth and epitaxy, ACCGE-18 , Monterey, California, USA , Jul. 2011

60. C. J. Wu, K. T. Chen, Z. C. Feng, and H. H. Lin, “Extended X-ray absorption fine structure study on InP0.52Sb0.48/GaAs” , 38th international symposium on compound semiconductors (ISCS 2011) , Berlin, Germany , May 2011

61. C. J. Wu, G. Tsai, Z. C. Feng, and H. H. Lin, “Extended X-ray absorption fine structure of InAsPSb” , 23rd international conference on indium phosphide and related materials (IPRM 2011) , Berlin, Germany , May 2011

62. Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Orentation dependent phase separation in GaAsSb” , 2011 AVS international plasma workshop – on processing and characterization of advanced materials , Taipei , Mar. 2011

63. Y. R. Lan, C. J. Wu, H. H. Lin, T. S. Chan, and Z. C. Feng, “Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy” , Proceedings of MBE Taiwan 2010 , Taipei, Taiwan , May 2010

64. C. J. Wu, S. W. Lo, and H. H. Lin, “'InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy” , 2010 internal conference on optics and photonics in Taiwan , Tainan, Taiwan , Dec. 2010

65. Y. R. Lan, C. J. Wu, H. H. Lin, L. Y. Chang, and Z. C. Feng, “Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy” , 2010 international conference on optics and photonics in Taiwan , Tainan, Taiwan , Dec. 2010

66. C. J. Wu, S. W. Lo, and H. H. Lin, “InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy” , 2010 international electron devices and materials symposia , Jhongli, Taiwan , Nov. 2010

67. J. S. Tzeng, C. J. Wu, C. J. Hong-Liao, and H. H. Lin, “Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy” , 2010 international electron devices and materials symposia , Jhongli, Taiwan , Nov. 2010

68. Y. T. Lin, Y. R. Lin, C. H. Ko, C. H. Wann, and H. H. Lin, “Hetero-epitaxy of InAs on patterened Si (100) substrates” , 2010 international electron devices and materials symposia , Jhongli, Taiwan , Nov. 2010

69. C. J. Wu, Y. R. Lan, L. Y. Chang, Z. C. Feng, and H. H. Lin, “X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy” , 2010 Micro-optics conference (MOC'10) , Hsintsu, Taiwan , Oct. 2010

70. C. J. Wu, G. Tsai, and H. H. Lin, “Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well” , 10th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-X) , Shanghai, China , Sep. 2010

71. T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE” , 16th international conference on crystal growth (ICCG-16) , Beijing, China , Aug. 2010

72. T. C. Ma, Y. T. Lin, and H. H. Lin, “Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE” , Proceedings of MBE Taiwan 2010 , Taipei, Taiwan , May 2010

73. Y. T. Lin, T. C. Ma, and H. H. Lin, “Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy” , Proceedings of MBE Taiwan 2010 , Taipei, Taiwan , May 2010

74. S. W. Lo, C. J. Wu, and H. H. Lin, “Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy” , Proceedings of MBE Taiwan 2010 , Taipei, Taiwan , May 2010

75. C. J. Wu, G. Tsai, and H. H. Lin, “Optical properties of As-rich InAsSb/InAsPSb multiple quantum well” , Proceedings of MBE Taiwan 2010 , Taipei, Taiwan , May 2010

76. J. S. Tzeng, C. J. Wu, and H. H. Lin, “Raman scattering in InAsPSb quaternary alloys” , Proceedings of MBE Taiwan 2010 , Taipei, Taiwan , May 2010

77. J. M. Lin, L. C. Chou, and H. H. Lin, “The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy” , 22nd international conference on indium phosphide and related materials (IPRM 2010) , Kagawa, Japan , May 2010

78. C. J. Wu, G. Tsai, and H. H. Lin, “Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells” , OPT2009 , Taipei, Taiwan , Dec. 2009

79. Y. T. Lin, T. C. Ma, H. H. Lin, J. D. Wu, and Y. S. Huang, “Nitrogen atomic rearrangement in thermally annealed GaAsSbN” , OPT2009 , Taipei, Taiwan , Dec. 2009

80. Y. C. Chin, H. H. Lin, C. H. Huang, and M. N. Tseng, “Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD” , 2009 International electron devices and materials symposia , Taoyuan, Taiwan , Nov. 2009

81. C. J. Wu, G. Tsai, and H. H. Lin, “Photoluminescence of InAsSb/InAsPSb quantum well” , 2009 International electron devices and materials symposia , Taoyuan, Taiwan , Nov. 2009

82. J. M. Lin, L. C. Chou, and H. H. Lin, “The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells” , 2009 International electron devices and materials symposia , Taoyuan, Taiwan , Nov. 2009

83. H. H. Lin, “Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucrures” , 2009 International electron devices and materials symposia , Taoyuan, Taiwan , Nov. 2009

84. Y. T. Lin, T. C. Ma, and H. H. Lin, “A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species” , 2009 International electron devices and materials symposia , Taoyuan, Taiwan , Nov. 2009

85. T. C. Ma, and H. H. Lin, “Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy” , 2009 International electron devices and materials symposia , Taoyuan, Taiwan , Nov. 2009

86. T. C. Ma and H. H. Lin, “Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN” , MBE Taiwan 2009 , Hualien, Taiwan , Jun. 2009

87. Y. T. Lin, T. C. Ma, S. P. Wang, and H. H. Lin, “Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN” , MBE Taiwan 2009 , Hualien, Taiwan , Jun. 2009

88. C. J. Wu, G. Tsai, and H. H. Lin, “InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy” , Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN , Hualien, Taiwan , Jun. 2009

89. Y. R. Lin, J. H. Chu, and H. H. Lin, “Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers” , International conference on optics and photonics in Taiwan (OPT’08) , Taipei, Taiwan , Dec. 2008

90. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction” , International conference on optics and photonics in Taiwan (OPT’08) , Taipei, Taiwan , Dec. 2008

91. S. P. Wang, T. C. Ma, Y. T. Lin, and H. H. Lin, “Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN” , 2008 International electron devices and materials symposia , Taichung, Taiwan , Nov. 2008

92. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Band structure of dilute nitride GaAsSbN” , 2008 International electron devices and materials symposia , Taichung, Taiwan , Nov. 2008

93. Y. C. Chou, G. Tsai, and H. H. Lin, “Photoluminescence study of InAsPSb epilayers grown on GaAs substrates” , 2008 International electron devices and materials symposia , Taichung, Taiwan , Nov. 2008

94. Q. Zhuang, A. Godenir, A. Krier, G. Tsai, and H. H. Lin, “Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics” , 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9) , Freiburg, Germany , Sep. 2008

95. C. J. Wu, and H. H. Lin, “Band alignment of InAsSb/InAsPSb quantum wells” , 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9) , Freiburg, Germany , Sep. 2008

96. H. H. Lin, T. C. Ma, Y. T. Lin, C. K. Chen, and T. Y. Chen, “Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy” , Proceedings of MBE Taiwan 2008 , Hsinchu, Taiwan , Jun. 2008

97. C. J. Wu, G. Tsai, and H. H. Lin, “Band alignment of InAsSb/InAsPSb quantum well” , Proceedings of MBE Taiwan 2008 , Hsinchu, Taiwan , Jun. 2008

98. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Origin of the annealing-induced blue-shift in GaAsSbN” , 20th International conference on InP and related materials , Paris, France , May 2008

99. C. K. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “GaAsSbN/GaAs long wavelength PIN detectors” , 20th International conference on InP and related materials , Paris, France , May 2008

100. K. Y. Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, L. H. Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, and S. D. Lin, “Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure” , American Physical Society spring meeting 2008 (APS2008) , New Orleans, Louisiana, U.S.A. , Feb. 2008

101. T. C. Ma, T. Y. Chen, Y. T. Lin, and H. H. Lin, “Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates” , MBE Taiwan 2007 , Kaohsiung, Taiwan , Jun. 2007

102. T. C. Ma, Y. T. Lin, T. Y. Chen, L. C. Chou, and H. H. Lin, “Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy” , 17th International conference on InP and related materials , Matsu, Japan , May 2007

103. C. J. Wu, G. Tsai, D. L. Wang, and H. H. Lin, “InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy” , 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) , Bad Ischl, Austria , May 2007

104. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy” , 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) , Bad Ischl, Austria , May 2007

105. C. K. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m” , International electron devices and materials symposia , Hsinchu, Taiwan , Dec. 2007

106. L. C. Chou and H. H. Lin, “Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy” , International electron devices and materials symposia , Hsinchu, Taiwan , Dec. 2007

107. I. C. Chen, G. Tsai, and H. H. Lin, “Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10” , International electron devices and materials symposia , Hsinchu, Taiwan , Dec. 2007

108. Y. R. Lin and H. H. Lin, “Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors” , International electron devices and materials symposia , Hsinchu, Taiwan , Dec. 2007

109. Y. T. Lin, T. C. Ma, T. Y. Chen and H. H. Lin, “Effect of thermal annealing on the optical properties of GaAsSbN” , International electron devices and materials symposia , Hsinchu, Taiwan , Dec. 2007

110. C. J. Wu, G. Tsai, and H. H. Lin, “Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally” , OPT2007 , Taichung, Taiwan , Dec. 2007

111. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Origin of the annealing-induced blue-shift in GaAsSbN bulk layers” , OPT2007 , Taichung, Taiwan , Dec. 2007

112. G. Tsai, D. L. Wang, and H. H. Lin, “Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy” , OPT2007 , Taichung, Taiwan , Dec. 2007

113. L. C. Chou and H. H. Lin, “[111]B-oriented GaAsSb/GaAs quantum wells grown by gas-source molecular beam epitaxy” , MBE Taiwan 2007 , Kaohsiung, Taiwan , Jun. 2007

114. T. Y. Chen, T. C. Ma, Y. T. Lin, and H. H. Lin, “Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy” , International electron devices and materials symposia , Tainan, Taiwan , Dec. 2006

115. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Effects of thermal annealing on the energy gap of GaAsSbN” , International electron devices and materials symposia , Tainan, Taiwan , Dec. 2006

116. Y. T. Lin, T. C. Ma, T. Y. Chen, and H. H. Lin, “Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy” , OPT2006 , Hsinchu, Taiwan , Dec. 2006

117. Y. R. Lin, J. S. Wang, and H. H. Lin, “Electric vertically coupled quantum dots grown by molecular beam epitaxy” , OPT2006 , Hsinchu, Taiwan , Dec. 2006

118. J. M. Lin, L. C. Chou, and H. H. Lin, “A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy” , OPT2006 , Hsinchu, Taiwan , Dec. 2006

119. D. L. Wang, G. Tsai, C. J. Wu, C. E. Wu, F. Tseng, and H. H. Lin, “Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy” , OPT2006 , Hsinchu, Taiwan , Dec. 2006

120. T. C. Ma, Y. T. Lin, T. Y. Chen, and H. H. Lin, “Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy” , OPT2006 , Hsinchu, Taiwan , Dec. 2006

121. Y. C. Wen, L. C. Chou, H. H. Lin, K. H. Lin, C. Y. Chen, and C. K. Sun, “Coherent acoustic phonon oscillation in (111) InGaAs/GaAs MQWs with piezoelectric fields” , OPT2006 , Hsinchu, Taiwan , Dec. 2006

122. G. Tsai, D. L. Wang, C. E. Wu, C. R. Wu, Y. T. Lin, and H. H. Lin, “InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy” , 14th international conference on molecular beam epitaxy (MBE2006) , Tokyo, Japan , Oct. 2006

123. H. H. Lin, “MBE growth of quaternary InAsPSb alloy” , MBE Taiwan 2006 and high K materials workshop , Chunli, Taiwan , Jun. 2006

124. T. C. Ma, T. Y. Chen, S. K. Chang, Y. T. Lin, and H. H. Lin, “GaAsSbN grown on GaAs by gas source molecular beam epitaxy” , MBE Taiwan 2006 and high K materials workshop , Chunli, Taiwan , Jun. 2006

125. G. Tsai, D. L. Wang, C. E. Wu, C. R. Wu, Y. T. Lin, and H. H. Lin, “InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy” , MBE Taiwan 2006 and high K materials workshop , Chunli, Taiwan , Jun. 2006

126. C. E. Wu, G. Tsai, and H. H. Lin, “Mid-infrared InAsPSb/InAsSb quantum-well light emitter” , MBE Taiwan 2006 and high K materials workshop , Chuli, Taiwan , Jun. 2006

127. L. C. Chou, Y. R. Lin, and H. H. Lin, “[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy” , 6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS) , Nottingham, UK , Apr. 2006

128. G. Tsai and H. H. Lin, “Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy” , 17th Indium Phosphide and Related Materials , Glasgow, Scotland , Jan. 2005

129. H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, D. K. Shih and H. H. Lin, “Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents” , 17th Indium Phosphide and Related Materials , Glasgow, Scotland , Jan. 2005

130. H. H. Lin, P. W. Liu, C. L. Tsai, G. H. Liao, and J. Lin, “GaAsSb/GaAs quantum wells grown by MBE” , MBE Taiwan 2005 , Hsinchu, Taiwan , Jan. 2005

131. C. L. Tsai, P. W. Liu, G. H. Liao, M. H. Lee, and H. H. Lin, “Study on the band line-up of GaAsSb/GaAs quantum wells” , MBE Taiwan 2005 , Hsinchu, Taiwan , Jan. 2005

132. C. S. Lee, F. Y. Chang, D. S. Liu, and H. H. Lin, “InAs/InGaAs/GaAs coupled quantum-dot laser” , MBE Taiwan 2005 , Hsinchu, Taiwan , Jan. 2005

133. G. Tsai and H. H. Lin, “InPSb bulk layers grown by gas source molecular beam epitaxy” , Mid-infrared optoelectronics: Materials and Devices (MIOMD 7) , Lancaster, UK , Jan. 2005

134. C. L. Tsai, C. T. Wan, P. W. Liu, G. H. Liao, and H. H. Lin, “Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers” , Proceedings of 2005 EDMS , Kaohsiung, Taiwan , Jan. 2005

135. P. W. Liu, G. Tsai, H. H. Lin, and T. Krier, “Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy” , OPT2005 , Tainan, Taiwan , Jan. 2005

136. G. Tsai, and H. H. Lin, “Growth of InPSb on InAs inside a miscibility gap using gas source MBE” , OPT2005 , Tainan, Taiwan , Jan. 2005

137. H. P. Hsu, Y. S. Huang, P.W. Liu, H. H. Lin, and K. K. Tiong, “Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells” , OPT2005 , Tainan, Taiwan , Jan. 2005

138. C. Y. Chen, C. M. Lai, and H. H. Lin, “Numerical simulation on optical properties of GaN/AlN quantum dots” , OPT2005 , Tainan, Taiwan , Jan. 2005

139. G. L. Wang, Y. S. Huang, H. H. Lin, and C. H. Chan, “The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well” , OPT2005 , Tainan, Taiwan , Jan. 2005

140. H. H. Lin, P. W. Liu, G. H. Liao, and C. L. Tsai, “GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes” , Proceedings of MBE Taiwan , Kao-hsiung, Taiwan , May 2004

141. F. Y. Chang, C. S. Lee, C. C. Wu, and H. H. Lin, “Growth of InAs quantum dots with light emission at 1.3 m” , Proceedings of MBE Taiwan , Kao-hsiung, Taiwan , May 2004

142. F. Y. Chang, G. H. Liao, C. S. Lee, and H. H. Lin, “InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy” , Proceeding of 16th Indium Phosphide and Related Materials , Kogoshima, Japan , Jan. 2004

143. G. Tsai, and H. H. Lin, “MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications” , OPT 2004 , Chung-Li, Taiwan , Jan. 2004

144. 142. L. C. Chou, B. L. Yen, J. D. Juang, H. T. Jan, and H. H. Lin, “Study on high-power resonant-cavity light-emitting diodes” , OPT 2004 , Chung-Li, Taiwan , Jan. 2004

145. C. H. Yu, K. K. Kao, M. H. Mao, F. Y. Chang, and H. H. Lin, “Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection” , OPT 2004 , Chung-Li, Taiwan , Jan. 2004

146. F. Y. Chang, C. S. Lee, C. C. Wu, and H. H. Lin, “Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm” , Proceedings of 2004 IEDMS , Hsinchu, Taiwan , Jan. 2004

147. G. H. Liao, C. L. Tsai, P. W. Liu, J. Lin, and H. H. Lin, “Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers” , Proceedings of 2004 IEDMS , Hsinchu, Taiwan , Jan. 2004

148. F. Y. Chang, T. C. Wu, and H. H. Lin, “Effect of deposition method on the density of InAs/InGaAs quantum dot” , Proceeding of 15th Indium Phosphide and Related Materials , Santa Barbara, USA , Jan. 2003

149. H. H. Lin, P. W. Liu, and J. R. Chen, “GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser” , Proceedings of the sixth Chinese optoelectronics symposium , Hong Kong , Jan. 2003

150. M.-H. Mao, T.-Y. Wu, F.-Y. Chang, and H.-H. Lin, “1.3 micron In(Ga)As/GaAs quantum-dot lasers and their dynamic properties” , Proceedings of the 16th annual meeting of IEEE LEOS , Tucson, USA , Jan. 2003

151. H.-H. Lin, D.-K. Shih, Y.-H. Lin and K.-H. Chiang, “InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers” , Proceedings of the 16th annual meeting of IEEE LEOS , Tucson, USA , Jan. 2003

152. H. H. Lin, P. W. Liu, and G. H. Liao, “GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers” , Proceedings of electron devices and materials symposium , Keelung, Taiwan , Jan. 2003

153. L. C. Chou, B. L. Yen, J. D. Juang, H. T. Jan, and H. H. Lin, “Resonant-cavity light-emitting diodes with coupled cavity” , Proceedings of electron devices and materials symposium , Keelung, Taiwan , Jan. 2003

154. F. Y. Chang, G. H. Liao, C. S. Lee, and H. H. Lin, “InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy” , Proceedings of electron devices and materials symposium , Keelung, Taiwan , Jan. 2003

155. Y. M. Chang, N. A. Chang, H. H. Lin, C. T. Chia, and Y. F. Chen, “Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures” , Proceedings of CLEO/Pacific Rim 2003 , Taipei, Taiwan , Jan. 2003

156. G. Tsai, P. W. Liu, and H. H. Lin, “Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy” , Proceedings of OPT’03 , Taipei, Taiwan , Jan. 2003

157. H. P. Hsu, Y. S. Huang, P. W. Liu, and H. H. Lin, “Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells” , Proceedings of OPT’03 , Taipei, Taiwan , Jan. 2003

158. G. H. Liao, P. W. Liu, and H. H. Lin, “1.3m GaAsSb/GaAs single quantum well laser diode” , Proceedings of OPT’03 , Taipei, Taiwan , Jan. 2003

159. M.-H. Mao, D.-M. Yeh, P.-W. Liu, H.-H. Lin, H.-L. Chen and C.-T. Pan, “Characterization of three-dimensional GaAs/AlxOy near-infrared photonic crystals fabricated by using an auto-cloning technique” , Proceedings of the 16th annual meeting of IEEE LEOS , Tucson, USA , Jan. 2003

160. C. L. Hsieh, T. M. Liu, M. C. Tien, C. K. Sun, L. W. Sung, and H. H. Lin, “Femtosecond carrier dynamics in InGaAsN single quantum well” , Proceedings of CLEO/Pacific Rim 2003 , Taipei, Taiwan , Jan. 2003

161. T. Y. Chu, H. H. Lin, and D. K. Shih, “Band gap reduction in InAsN alloy” , Proceeding of 14th Indium Phosphide and Related Materials , Stockholm, Sweden , Jan. 2002

162. P.-W. Liu, M.-H. Lee, and H. H. Lin, “Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser” , 15th Annual Meeting of IEEE Lasers and Electro-optics Society , Glasgow, Scotland , Jan. 2002

163. L. W. Sung, G. Tsai, and H. H. Lin, “1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE” , Proceedings of OPT’02 , Taipei, Taiwan, ROC , Jan. 2002

164. D. K. Shih, H. H. Lin, and Y. F. Chen, “Structural properties and Raman modes of InAsN bulk films on (100) InP substrates” , Proceedings of OPT’02 , Taipei, Taiwan, ROC , Jan. 2002

165. L. W. Sung, G. Tsai, and H. H. Lin, “1.3m InGaAsN quantum well laser grown by plasma assisted gas source MBE” , Proceedings of 2002 IEDMS , Taipei, Taiwan, ROC , Jan. 2002

166. D. K. Shih, H. H. Lin, and Y. F. Chen, “Raman scattering characterization of InAsN bulk film on (100) InP substrates” , Proceedings of 2002 IEDMS , Taipei, Taiwan, ROC , Jan. 2002

167. P. W. Liu, M. H. Lee, J. R. Chen, and H. H. Lin, “Low-threshold ~1.3m GaAsSb quantum well laser” , Proceedings of 2002 IEDMS , Taipei, Taiwan, ROC , Jan. 2002

168. F. Y. Chang, T. C. Wu, and H. H. Lin, “1.3m InAs/InGaAs quantum dot lasers grown by GSMBE” , Proceedings of 2002 IEDMS , Taipei, Taiwan, ROC , Jan. 2002

169. C. M. Lai, F. Y. Chang, C. W. Chang, H. H. Lin, and G. J. Jan, “Optical characterization on InAs/GaAs quantum dots” , Proceedings of 2002 IEDMS , Taipei, Taiwan, ROC , Jan. 2002

170. C. M. Lai, F. Y. Chang, C. W. Chang, H. H. Lin, and G. J. Jan, “Optical characterization on InAs/GaAs quantum dots” , Proceedings of 2002 IEDMS , Taipei, Taiwan, ROC , 2002

171. T. M. Liu, M. C. Tien, J. W. Shi, C. K. Sun, L. W. Sung, H. H. Lin, B. R. Wu, and N. T. Yeh, “Femtosecond carrier dynamics in InGaAsN single quantum well” , Proceedings of OPT’02 , Taipei, Taiwan, ROC , Jan. 2002

172. D. K. Shih, H. H. Lin, L. W. Sung, and T. Y. Chu, “Bulk InAsN Films Grown by Plasma-Assisted Gas Source Molecular Beam Epitaxy” , Proceeding of 13th Indium Phosphide and Related Materials , Nara, Japan , Jan. 2001

173. L. W. Sung, H. H. Lin, and C. T. Chia, “Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE” , Proceeding of Optics and Photonics Taiwan , Kaohsiung, Taiwan, ROC , Jan. 2001

174. D. K. Shih, H. H. Lin, and Y. H. Lin, “Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE” , Proceeding of Optics and Photonics Taiwan’01 , Kaohsiung, Taiwan, ROC , Jan. 2001

175. D. K. Shih, H. H. Lin, T. Y. Chu, and T. R. Yang, “InAsN Grown by Plasma-assisted Gas Source MBE” , 2001 MRS Fall meeting, Symposium H , H2.5, Boston, USA , Nov. 2001

176. L. W. Sung, H. H. Lin, and C. T. Chia, “V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE” , 2001 MRS Fall Meeting , I3.22, Boston, MA, USA , Jan. 2001

177. M. H. Lee, P. W. Liu, and H. H. Lin, “Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well” , 2001 Electron Devices and Materials Symposia , KaoHsiung, Taiwan, ROC , Jan. 2001

178. T. Y. Chu, D. K. Shih, and H. H. Lin, “On the InAs(N)/InGaAs quantum wells” , 2001 Electronics Devices and Materials Symposia , Kaohsiung, Taiwan, ROC , Jan. 2001

179. D. K. Shih, H. H. Lin, and Y. H. Lin, “Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE” , Middle Infrared Coherent Sources MICS’01 International Workshop , St. Petersburg, Russia , Jan. 2001

180. P. W. Liu and H. H. Lin, “Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well” , Proceeding of Optics and Photonics Taiwan '01 , Kaohsiung, Taiwan, ROC , Jan. 2001

181. W. C. Wu, H. Wang, and H. H. Lin, “A fully integrated broadband amplifier with 161% 3-db bandwidth” , Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific , Taiwan, ROC , Jan. 2001

182. L. W. Sung, H. H. Lin, “Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE” , 2000 International Electron Devices and Materials Symposia , Chung-Li, Taiwan , Jan. 2000

183. H. C. Chiu, S. C. Yang, C. K. Lin, Y. J. Chan, and H. H. Lin, “In0.49Ga0.51P/ In0.15Ga0.85As doped-channel HFETs with low parasitic resistance by inserting a Si-doped layer” , 2000 topical workshop on heterostructure microelectronics , Nagoya , Aug. 2000

184. S.C. Yang, S.C. Chiou, Y.-J. Chan, and H. H. Lin, “Selectively dry-etched In0.49Ga0.51P/ In0.15Ga0.85As double doped-channel FETs using CHF3+BCl3 plasma” , 12th international conference on InP and related material , Williamsburg, Virginia, USA , May 2000

185. J. S. Wang, H. H. Lin, L. W. Sung and G. R. Chen, “Growth and characterization of InAsN alloys” , 12th international conference on InP and related material , Williamsburg, Virginia, USA , May 2000

186. H. H. Lin, “InAsN grown by gas source molecular beam epitaxy” , The 4th Seminar on Science and Technology (ROC-Japan Exchange Program) -- Conference on Nitride Semiconductor Materials and Devi , Tokyo, Japan , Mar. 2000

187. D. K. Shih, H. H. Lin, T. Y. Chu, and T. R. Yang, “Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy” , International Photonics Conference 2000 , Hsinchu, Taiwan , Jan. 2000

188. D. K. Shih and H. H. Lin, “InAsN grown by GSMBE” , 2000 International Electron Devices and Materials Symposia , Chung-Li, Taiwan , Jan. 2000

189. L. W. Sung, H. H. Lin, “Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE” , International Photonics Conference 2000 , Hsinchu, Taiwan , Jan. 2000

190. F. Y. Chang and H. H. Lin, “Anomalous photoluminescence of InGaP/GaAs quantum well grown by GSMBE” , 2000 International Electron Devices and Materials Symposia , Chung-Li, Taiwan , Jan. 2000

191. C. W. Liu, M. H. Lee, C. F. Lin, I. C. Lin, W. T. Liu, and H. H. Lin, “Light emission and detection by metal oxide silicon tunneling diodes” , 1999 IEDM , Washington D. C., USA , Dec. 1999

192. J. S. Wang, H. H. Lin, L. W. Sung, “InAsN quantum wells grown on InP by gas source MBE” , 3rd international conference on mid-infrared optoelectronics materials and devices , O21, Aachen, Germany , Jan. 1999

193. L. W. Sung, J. S. Wang, H. P. Shiao, C. Y. Wang, I. F. Jang, T. T. Shih, Y. K. Tu, and H. H. Lin, “1.55m asymmetric coupled quantum well structure for laser-modulator integration” , 1999 Electron Devices and Materials Symposia , Taoyuan, Taiwan, ROC , Jan. 1999

194. J. S. Wang, G. R. Chen, L. W. Sung, and H. H. Lin, “InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy” , 1999 Electron Devices and Materials Symposia , Taoyuan, Taiwan, ROC , Jan. 1999

195. J. S. Wang, G. R. Chen, L. W. Sung, and H. H. Lin, “Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy” , Optics and Photonics/Taiwan'99 , Chung-Li, ROC , Jan. 1999

196. G. R. Chen, J. S. Wang, and H. H. Lin, “Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells” , Optics and Photonics/Taiwan'99 , Chung-Li, FR-I6-A-8, ROC , Jan. 1999

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Patents:

1. 楊哲維、劉繼文、林浩雄、葉凌彥, “One-dimensional nanostructure growth on graphene and devices thereof” , 9,711,607 (美國專利), Jul. 2017

2. 林浩雄、馬大鈞、林佑儒、王俊評、黃正宏, “環境光偵測器” , 中華民國，發明第 I 335075號, Dec. 2010

3. H. H. Lin, T. C. Ma, Y. R. Lin, J. P. Wang, and C. H. Huang, “Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye” , U. S. Patent No. 7,538,406, May 2009

4. 林浩雄、馬大鈞、吳俊逸, “類人眼之光偵測器” , 中華民國，發明第 I 287877, Oct. 2007

5. 洪儒菘、林浩雄, “背靠背式雙波長半導體雷射元件” , 中華民國發明專利，No. 135640, Jun. 2001

6. 邱煥凱、林浩雄, “集總常數補償式高低通平衡至不平衡轉換器” , 中華民國發明專利，No. 139060, Jul. 2001

7. H. K. Chiou and H. H. Lin, “Lumped constant compensated high/low pass balanced-to-unbalanced transition” , U. S. Patent No. 6052039, Apr. 2000

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