吳肇欣 Wu, Chao-Hsin
- Professor, Department of Electrical Engineering, National Taiwan University
- Ph.D. University of Illinois at Urbana-Champaign, 2010
- M.S. National Taiwan University, 2004
- B.S. National Taiwan University, 2002
- Office : MD 623
- TEL : +886-2-33663694
- Email :
- Office Hour : By appointment.
- Website : http://cc.ee.ntu.edu.tw/~ioedlab/index.html
Major Research Areas
Research Summary
My research topics focus on the design, fabrication, and characterization of high-speed III-V semiconductor electronic and optoelectronic devices. The main interest is developing the novel device, the light emitting transistor (LET) and transistor laser (TL), which is a three-port device with simultaneous electrical and optical output. The device demonstrates a fast-recombining carrier lifetime (in picosec range) than conventional LEDs or diode lasers, resulting in a resonance-free laser response and 7 GHz spontaneous modulation bandwidth (world record). It can help reduce the cost, complexity, and heat problem of current communication system. The "transistor-like" building block is suitable for next-generation photonic integrated circuit (PIC) application.
Chao-Hsin Wu received the B.S. degree in Electrical Engineering and M.S. degree in Graduate Institute of Photonics and Optoelectronics from National Taiwan University, Taipei, Taiwan, in 2002 and 2004, respectively. He used to work as a full-time teaching assistant in charge of Automatic Control Lab in the Department of Electrical Engineering in National Taiwan University from 2005 to 2006. He then joined the High-Speed Integrated Circuit group in University of Illinois at Urbana-Champaign in 2006 and received the Ph.D. degree in 2010. After finishing the Ph.D. degree, he continued working as a postdoctoral research fellow before he joined the faculty member in National Taiwan University.
In Illinois, he pioneered the development of novel III-V high-speed microelectronics and optoelectronics devices, including InGaN/GaN heterojunction bipolar transistors, InGaP/GaAs power amplifiers, and microcavity lasers. His research mainly focuses on the three-terminal light-emitting transistors (LETs) and transistor lasers (TLs).. He has demonstrated the world-record optical spontaneous modulation bandwidth of 7 GHz (corresponding to a recombination lifetime of 23 ps), which is a breakthrough in semiconductor device technology history for the past 47 years.
His current research at National Taiwan University includes high speed VCSELs for optical interconnects, GaN-on-Si power and rf electronics, 2D material field-effect transistors, Si photonics, transistor lasers for optical logic gates, GaN LED for visible light communications. He has published more than 40 journal papers and 60 conference papers.
Dr. Wu is also a member of SPIE and OSA. He received the Nick and Katherine Holonyak, Jr. Award in 2010 from UIUC. He was entitled Irving T. Ho Outstanding Young Scholar and received the Academic Contribution Award from EECS College of National Taiwan University in 2017.
Journal articles & book chapters
1. F. Tan, C. H. Wu, M. Feng, and N. Holonyak, Jr., “Energy Efficient Microcavity Lasers with 20 and 40 Gb/s data transmission” , Appl. Phys. Lett. , Vol. 98 , 191107-, Jan. 2011
2. C. H. Wu, F. Tan, M. K. Wu, M. Feng, and N. Holonyak, Jr., “The Effet of Microcavity Laser Recombination Lifetime On Microwave Bandwidth and Eye-diagram Signal Integrity” , J. of Appl. Phys. , Vol. 109 , 05312-, Jan. 2011
3. C. H. Wu, F. Tan, M. Feng, and N. Holonyak, Jr., “The Effect of Mode Spacing On The Speed of Quantum-well Microcavity Lasers” , Appl. Phys. Lett. , Vol. 97 , 091103-, Jan. 2010
4. H. W. Then, C. H. Wu, M. Feng, and N. Holonyak, Jr., “Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser” , Appl. Phys. Lett. , Vol. 96 , 263505-, Jan. 2010
5. C. H. Wu, H. W. Then, M. Feng, and N. Holonyak, Jr., “Microwave Determination of Electron-hole Recombination Dynamics from Spontaneous to Stimulated Emission in a Quantum-well Microcavity Laser” , Appl. Phys. Lett. , Vol. 96 , 131108-, Jan. 2010
6. H. W. Then, C. H. Wu, M. Feng, and N. Holonyak, Jr., “Microwave Characteristics of Purcell Enhancement in a Microcavity Laser” , Appl. Phys. Lett. , Vol. 96 , 131107-, Jan. 2010
7. C. H. Wu, G. Walter, H. W. Then, M. Feng, and N. Holonyak Jr., “4 GHz Modulation Bandwidth of Integrated 2x2 LED Array” , IEEE Photonic Technology Letters , Vol. 21 , 1834-, Jan. 2009
8. G. Walter, C. H. Wu, H. W. Then, M. Feng, and N. Holonyak, Jr., “4.3 GHz Optical Bandwidth Light Emitting Transistor” , Appl. Phys. Lett. , Vol. 94 , 241101-, Jan. 2009
9. G. Walter, C. H. Wu, H. W. Then, M. Feng, and N. Holonyak, Jr., “Tilted-Charge High Speed (7 GHz) Light Emitting Diode” , Appl. Phys. Lett. , Vol. 94 , 231125-, Jan. 2009
10. C. H. Wu, G. Walter, H. W. Then, M. Feng, and N. Holonyak, Jr., “Scaling of Light Emitting Transistor for Multi-GHz Optical Bandwidth” , Appl. Phys. Lett. , Vol. 94 , 171101-, Jan. 2009
11. H. W. Then, C. H. Wu, G. Walter, M. Feng, and N. Holonyak, Jr., “Electrical-optical signal mixing and multiplication (2 -> 22 GHz) with a tunnel junction transistor laser” , Appl. Phys. Lett. , Vol. 94 , 101114-, Jan. 2009
12. M. Feng, N. Holonyak, Jr., H. W. Then, C. H. Wu, and G. Walter, “Tunnel Junction Transistor Laser” , Appl. Phys. Lett. , Vol. 94 , 041118-, Jan. 2009
13. B. F. Chu-kung, C. H. Wu, G. Walter, M. Feng, and N. Holonyak, Jr., “Modulation of High Current Gain (Beta>49) Light-Emitting InGaN/GaN Heterojunction Bipolar Transistors (HBTs)” , Appl. Phys. Lett. , Vol. 91 , 232114-, Jan. 2007
14. H. W. Then, M. Feng, N. Holonyak, Jr., and C. H. Wu, “Experimental Determination of the Effective Minority Carrier Lifetime in the Operation of a Quantum-Well (QW) n-p-n Heterojunction Bipolar Light-Emitting Transistor of Varying Base QW Design and Doping” , Appl. Phys. Lett. , Vol. 91 , 033505-, Jan. 2007
15. Wei-Che Chang, Yi-Shin Su, Chao-Hsin Wu and Ching-Fuh Lin, “Broad-Gain Measurement of Semiconductor Optical Amplifier with Nonidentical Multiple Quantum wells” , Jpn. J. Appl. Phys. , Vol. Vol.45, No.09 , pp. L259-L261-, Jan. 2006
16. C. F. Lin, Y. S. Su, C. H. Wu, and Y. C. Chang, “Influence of separate confinement heterostructure on carrier distribution in InGaAsP laser diodes with nonidentical multiple quantum wells” , Jpn. J. Appl. Phys , Vol. 43 , 7032-, Jan. 2004
17. C. F. Lin, Y. S. Su, C. H. Wu, and Gagik S. Shmavonyan, “Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells” , IEEE Photonics Technology Letters , Vol. 16 , 1441-, Jan. 2004
18. Ching-Fuh Lin, Yi-Shin Su, Di-Ku Yu, Chao-Hsin Wu, and Bing-Ruey Wu, “Improved temperature characteristics of laser diodes with nonidentical multiple quantum wells due to temperature-induced carrier redistribution” , Appl. Phys. Lett. , Vol. 82 , 3403-, Jan. 2003
Conference & proceeding papers:
1. M. K. Wu, C. H. Wu, G. Walter, M. Feng, P. L. Lam, T. Chin, A. Mohammad, “The Effect of Interdigitated Layout Design on the Improvement of Optical and GHz Modulation Bandwidth of Tilted-Charge Light-Emitting Diodes” , 2011 GaAs MANTECH Conference , Palm Spring , Jan. 2011
2. C. H. Wu, H.W. Then, M. Feng, and N. Holonyak, Jr., “Direct Voltage Modulated Semiconductor Laser use Photon Assisted Tunneling Process” , International Electron Devices and Materials Symposium , Taiwan , Jan. 2010
3. C. H. Wu, G. Walter, H. W. Then, M. Feng, “Design and Layout of Multi GHz Operation of Light Emitting Diodes” , 2010 GaAs MANTECH Conference , Portland, USA , Jan. 2010
4. C. H. Wu, B. F. Chu-kung, M. Feng, “Process and Performance Improvements to InGaN/GaN HBTs” , 2008 GaAs MANTECH Conference , Chicago, USA , Jan. 2008
5. Y. S. Su, C. H. Wu and C. F. Lin, “Wavelength switching and light modulation in laser diodes with nonidentical multiple quantum wells” , Photonics West 2005 , San Jose, USA , Jan. 2005
6. Wei-Che Chang, Chao-Hsin Wu, Yi-shin Su, Hao-Hsiung Lin, and Ching-Fuh Lin, “Enhance Modulation Speed in Quantum-dot Lasers Using Second Quantized State Device” , OPT 2005 , Tainan, Taiwan , Jan. 2005
7. Yi-Shin Su, Wei-Che Chang, Chao-Hsin Wu, and Ching-Fuh Lin, “Gain measurement of broadband quantum dot SOA by two-section technique” , CLEO/Europe05, , Munich, Germany , Jan. 2005
8. Yi-Shin Su, Chao-Hsin Wu and Ching-Fuh Lin, “Wavelength switching and light modulation in laser diodes with nonidentical multiple quantum wells” , Photonics West 2005 , San Jose, USA , Jan. 2005
9. C. H. Wu, Y. S. Su, C. F. Lin, “Measurement of broadband gain spectrum of semiconductor optical amplifiers using a two-section technique” , CLEO 2004 , San Francisco, CA. USA , Jan. 2004
10. Yi Ho, Chao-Hsin Wu, Yi-Shin Su, Chia-Wei Tsai and Ching-Fuh Lin, “Influence Of Carrier Tunneling Between Multiple Quantum Wells On Modulation Response Of Laser Diodes” , OPT2004 , Jhongli, Taiwan , Jan. 2004
11. Yi-Shin Su, Chao-Hsin Wu and Ching-Fuh Lin, “Wavelength Switching In Two Section Laser Diode With Nonidentical MQWS” , OPT2004 , Jhongli, Taiwan , Jan. 2004
12. C. H. Wu, C. F. Lin, D. K. Yu, B. R. Wu, “Improved temperature characteristics of semiconductor lasers due to carrier redistribution among nonidentical multiple quantum wells” , Proceedings of SPIE, Physics and Simulation of Optoelectronic Devices XI , San Jose, CA, USA , Jan. 2003
13. Chao-Hsin Wu, Di-Ku Yu, and Ching-Fuh Lin, “Improved temperature characteristics of semiconductor lasers due to carrier redistribution among nonidentical multiple quantum wells” , CLEO/Pacific Rim 2003 , Taipei, Taiwan , Jan. 2003
14. Chao-Hsin Wu, Yi-Shin Su, Ching-Fuh Lin, “Measurement of gain spectrum on semiconductor laser by a two-section technique” , OPT 2003 , Taipei, Taiwan , Jan. 2003
15. Di-Ku Yu, Chao-Hsin Wu, Ching-Fuh Lin, and Bing-Ruey Wu, “Novel behaviors of laser diodes due to temperature-induced carrier redistribution among nonidentical multiple quantum wells” , OPT2002 , Taipei, Taiwan , Jan. 2002