李峻霣 Li, Jiun-Yun
- 國立台灣大學電機工程學系 專任教授
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國立台灣大學電子工程學研究所 教授
- 國立台灣大學重點科技學院 教授
- Ph.D. Princeton University, 2013
- M.S. University of Maryland, College Park, 2007
- B.S. National Taiwan University, 1998
- 辦公室 : 電機二館 221
- 電話 : +886-2-33661774
- Email :
- Office Hour : by email appointment
- 個人網頁 : https://sites.google.com/g.ntu.edu.tw/jiunyun/home
主要研究領域
研究領域摘要
量子計算:
元件微縮經過了六十年的發展後即將邁入尾聲，量子計算由於其無與倫比的計算能力，無疑是未來計算科技中最有潛力的候選人，其中又以半導體與超導體這兩個固態系統最引人注目，主要是因為其可擴展性與傳統Si CMOS的高度相容性。
本實驗室致力發展大型量子位元系統並與低溫CMOS元件進行整合，主要的研究項目包括(i) Si/SiGe、Ge/GeSi、與GeSn/Ge異質結構成長 heterostructures；(ii) 量子點元件與約瑟夫森結元件製作；(iii) 自旋操控技術如electron-spin resonance (ESR)、electric-dipole spin resonance (EDSR)及spin-orbit coupling (SOC)；(iv) 量子位元(~ 20 mK)與cryo-CMOS (1.5 K)的低溫特性量測分析.
Quantum Computing
Device scaling of CMOS may not continue after so much great success in the past six decades. For future computing technologies, quantum computing is the most promising candidate owing to its ultimate computing power compared to classical computing. Among all candidates, solid-state systems such as spin qubits and superconducting transmon qubits have attracted much attention because of scalability and compatibility to Si-based CMOS VLSI technology. Our group is aiming for the development of large-scale qubit system integrated with the cryo-CMOS devices by working on (i) material growth of Si/SiGe, Ge/GeSi, and GeSn/Ge heterostructures, (ii) device fabrication of quantum dots and Josephson junctions devices, (iii) spin manipulation by electron-spin resonance (ESR), electric-dipole spin resonance (EDSR), or spin-orbit coupling (SOC), and (iv) cryogenic characterizationof qubit devices (~ 20 mK) and cryo-CMOS (1.5 K).
Jiun-Yun Li received his B.S. and M.S. degrees in electrical engineering and photonics and optoelectronics in 1998 and 2000, respectively, both from National Taiwan University, Taipei, Taiwan. Then he moved on to the U.S. to receive another M.S. degree from University of Maryland, College Park in 2007 and Ph.D. degree from Princeton University in 2013, both in electrical engineering. Prof. Li joined the Department of Electrical Engineering and the Graduate Institute of Electronics Engineering at National Taiwan University as an assistant professor in 2013 and promoted to an associate professor and a professor in 2018 and 2022, respectively. He served as a vice chair of the Department of Electrical Engineering at NTU at 2022 ~ 2024.
He is a recipient of several awards such as William Lin young chair professor (2020), outstanding teaching award (2019), and Lam research awards (2021, 2020, and 2018). His research interests include Si-based quantum physics, electronics and device application (e.g. semiconductor and superconducting qubit devices, spin-orbit coupling), and group IV semiconductor epitaxial growth (e.g. SiGe, GeSn) by chemical vapor deposition.
Journal articles & book chapters
1. Yu-Cheng Li, Che-Hao Chang, Yu-Jui Wu, Chen-Yao Liao, and Jiun-Yun Li, “Design guidelines for Si metal-oxide-semiconductor and Si/SiGe heterostructure quantum dots for spin qubits” , Applied Physics Letters , Vol. vol. 126, no. 2 , 063502-, Feb. 2025
2. Kai-Ying Tien, Yen-Yang Chen, Chia-You Liu, and Hsiang-Shun Kao, and Jiun-Yun Li, “Extremely high electron mobility in GeSn epitaxial films by chemical vapor deposition” , Advanced Electronic Materials , Vol. vol. 11 , 2400925-, Apr. 2025
3. Yi-Ting Chen, Guan-Yu Huang, Min-Jui Lin, Jiun-Yun Li, and Jun-Chau Chien, “Experimental Studies of Millimeter-Wave CMOS LO Circuits for High-temperature Qubits Operations” , IEEE Microwave and Wireless Technology Letters , 2025
4. Chia-Tse Tai and Jiun-Yun Li, “Recent progress in undoped group-IV heterostructures for quantum technologies” , Materials for Quantum Technology , Vol. vol. 4, no. 1 , 012001-, Mar. 2024
5. Che-Hao Chang, Yu-Cheng Li, Yu-Jui Wu, Chen-Yao Liao, Min-Jui Lin, Hung-Yu Tsao, and Jiun-Yun Li, “A hyperbolic micromagnet for multiple spin qubits with fast Rabi oscillations and high addressability” , IEEE Electron Device Letters , Vol. vol. 45, no. 4 , 526-529, Apr. 2024
6. Yu-Jui Wu, Hung-Yu Tsao, Chen-Yao Liao, Wei-Hsiang Kao, Chia-You Liu, and Jiun-Yun Li, “Transient characteristics of carrier transport in an isotopically-enriched 28Si/SiGe undoped heterostructure” , Applied Physics Letters , Vol. vol. 125, no. 9 , 093506-, Aug. 2024
7. A. Bradicich, P. Petluru, S. Davari, H. Zhao, S. Gangwal, Chia-you Liu, D. Vasileska, Y. Zeng, H. Churchill, Jiun-Yun Li, M. P. Lilly, and T. M. Lu, “Study of phase decoherence in GeSn (8 %) through measurements of the weak antilocalization effect” , Journal of Applied Physics , Vol. vol. 136, no. 21 , 214301-, Dec. 2024
8. T. C. Hong, W. H. Lu, Y. H. Wang, Jiun-Yun Li, Y. J. Lee, T. S. Chao, “Fabrication of GeSn nanowire MOSFETs by utilizing highly selective etching techniques” , IEEE Transactions on Electron Devices , Vol. vol. 70, no. 4 , 2028-2033, Apr. 2023
9. J. Y. Wu, Y. F. Wang, Chia-You Liu, S. C. Kuo, T. H. Chen, Jiun-Yun Li, C. Y. Huang, C. H. Liu, J. Y. Yang, C. C. Chang, and T. H. Chang, “High-quality GeSn thin-film resonant cavities for short-wave infrared applications” , Journal of Vacuum Science Technology B , Vol. vol. 41, no. 4 , 042202-, Jun. 2023
10. Nai-Wen Hsu, Wei-Chih Hou, Yu-Jui Wu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, and Jiun-Yun Li, “Temperature dependence of charge distributions and carrier mobility in an undoped Si/SiGe heterostructure” , IEEE Transactions on Electron Devices , Vol. vol. 69, no. 2 , 482-486, Feb. 2022
11. S. W. Chang, et al., “First demonstration of heterogeneous IGZO/Si CFET monolithic 3D integration with dual workfunction gate for ultra low-power SRAM and RF applications” , IEEE Transactions on Electron Devices , Vol. vol. 69, no. 4 , 2101-2107, Apr. 2022
12. Wei-Chih Hou, Nai-Wen Hsu, Tz-Ming Wang, Chia-You Liu, Hsiang-Shun Kao, Miin-Jang Chen, and Jiun-Yun Li, “Cryogenic Si/SiGe heterostructure flash memory devices” , ACS Applied Electronic Materials , Vol. vol. 4, no. 6 , 2879-2884, Jun. 2022
13. A. J. Miller, M. Brickson, W. J. Hardy, Chia-You Liu, Jiun-Yun Li, A. Baczewski, M. P. Lilly, T. M. Lu, and D. R. Luhman, “Effective out-of-plane g-factor in strain-Ge/SiGe quantum dots” , Physical Review B , Vol. vol. 106, no. 12 , L121402-, Sep. 2022
14. Chia-You Liu, Kai-Ying Tian, Po-Yuan Chiu, Yu-Jui Wu, Yen Chuang, Hsiang-Shun Kao, and Jiun-Yun Li, “Room-temperature negative differential resistance and high tunneling current density in GeSn Esaki diodes” , Advanced Materials , Vol. vol. 34, no. 41 , 2203888-, Oct. 2022
15. X. Wang, Y. C. Lin, Chia-Tse Tai, S. W. Lee, T. M. Lu, S. H. R. Shin, S. Addamane, C. Sheehan, Jiun-Yun Li, Y. Kim, and J. Yoo, “Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure” , APL Materials , Vol. vol. 10, no. 11 , 111108-, Nov. 2022
16. Wei-Chih Hou, Pao-Chuan Shih, H. H. Lin, B. Wu, and Jiun-Yun Li, “High band-to-band tunneling current in InAs/GaSb heterojunction Esaki diodes by the enhancement of electric fields close to the mesa sidewalls” , IEEE Transactions on Electron Devices , Vol. vol. 68, no. 8 , 3748-3754, Aug. 2021
17. D. Chen, S. Cai, Nai-Wen Hsu, S. H. Huang, Yen Chuang, E. Nielsen, Jiun-Yun Li, C. W. Liu, T. M. Lu, and D. Laroche, “Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure” , Applied Physics Letters , Vol. vol. 119, no. 22 , 223103-, Nov. 2021
18. Yao-Chun Chang, I. Huang, C. Y. Chen, Min-Jui Lin, S. Y. Chen, and Jiun-Yun Li, “Electron-spin-resonance meanderlines for effective spin control in silicon quantum dots for large-scale qubit applications” , Applied Physics Letters , Vol. vol. 119, no. 24 , 243503-, Dec. 2021
19. Yen Chuang, Chia-You Liu, G. L. Luo, and Jiun-Yun Li, “Electron mobility enhancement in GeSn n-Channel MOSFETs by tensile strain” , IEEE Electron Device Letters , Vol. vol. 42, no. 1 , 10-13, Jan. 2021
20. Yen Chuang, Chia-You Liu, Hsiang-Shun Kao, Kai-Ying Tien, G. L. Luo, and Jiun-Yun Li, “Schottky barrier height modulation of metal/n-GeSn contacts featuring low contact resistivity by in-situ chemical vapor deposition doping and NiGeSn alloy formation” , ACS Applied Electronic Materials , Vol. vol. 3, no. 3 , 1334-1340, Mar. 2021
21. Chia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, C. T. Hsieh, S. W. Chang, and Jiun-Yun Li, “Strain effects on Rashba spin-orbit coupling of two-dimensional hole gases in GeSn/Ge heterostructures” , Advanced Materials , Vol. vol. 33, no. 26 , 2007862-, Jul. 2021
22. X. Liu, T. M. Lu, C. T. Harris, F. L. Lu, Chia-You Liu, Jiun-Yun Li, C. W. Liu, and R. R. Du, “Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge-SiGe heterostructure” , Physical Review B , Vol. vol. 101, no. 7 , 075304-, Feb. 2020
23. Po-Yuan Chiu, D. Lidsky, Yen Chuang, Yi-Hsin Su, Jiun-Yun Li, C. T. Harris, and T. M. Lu, “Post-growth modulation doping by ion implantation” , Applied Physics Letters , Vol. vol. 117, no. 26 , 263502-, Dec. 2020
24. Yi-Hsin Su, Kuan-Yu Chou, Yen Chuang, T. M. Lu, and Jiun-Yun Li, “Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening” , Journal of Applied Physics , Vol. vol. 125, no. 23 , 235705-, Jun. 2019
25. C. W. Tung, T. R. Kuo, C. S. Hsu, Yen Chuang, H. C. Chen, C. K. Chang, C. Y. Chien, Y. J. Lu, T. S. Chan, J. F. Lee, Jiun-Yun Li, and H. M. Chen, “Light-induced activation of adaptive junction for efficient solar-driven oxygen evolution: in-situ unraveling the interfacial metal-silicon junction” , Advanced Energy Materials , Vol. vol. 9, no. 31 , 1901308-, Jul. 2019
26. W. Hardy, C. Harris, Yi-Hsin Su, Yen Chuang, J. Moussa, L. Maurer, Jiun-Yun Li, T. M. Lu, and D. Luhman, “Single and double hole quantum dots in strained Ge/SiGe quantum wells” , Nanotechnology , Vol. vol. 30, no. 21 , 215202-, Mar. 2019
27. Ching-Wei Tung, Yen Chuang, Hsiao-Chien Chen, Ting-Shan Chan, Jiun-Yun Li, and Hao-Ming Chen, “Tunable electrodeposition of Ni electrocatalysts onto Si microwires array for photoelectrochemical water oxidation” , Particle and Particle Systems Characterization , Vol. vol. 35, no. 1 , 1700321-, Jan. 2018
28. Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chiu, Yen Chuang, and Jiun-Yun Li, “Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure” , Applied Physics Letters , Vol. vol. 112, no. 8 , 083502-, Feb. 2018
29. Tzu-Hung Liu, Yen Chuang, Po-Yuan Chiu, Chia-You Liu, Cheng-Hong Shen, Guang-Li Lou, and Jiun-Yun Li, “High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing” , IEEE Electron Device Letters , Vol. vol. 39, no. 4 , 468-471, Apr. 2018
30. E. Bussmann, J. K. Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, Jiun-Yun Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, and T. M. Lu, “Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices” , Physical Review Materials , Vol. vol. 1, no. 6 , 066004-, Jun. 2018
31. Chung-Tao Chou, N. T. Jacobson, J. E. Moussa, A. D. Baczewski, Yen Chuang, Chia-You Liu, Jiun-Yun Li, and T. M. Lu, “Weak antilocalization in undoped Ge/GeSi heterostructures beyond the diffusive regime” , Nanoscale , Vol. vol. 10, no. 44, , 20559-20564, Nov. 2018
32. T. M. Lu, L. A. Tracy, D. Laroche, S. –H. Huang, Y. Chuang, Y. –H Su, Jiun-Yun Li, and C. W. Liu, “Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system” , Scientific Reports , Vol. vol. 7 , 2468-, May 2017
33. T. M. Lu, C. T. Harris, S. –H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “Effective g factor of low-density two-dimensional holes in a Ge quantum well” , Applied Physics Letters , Vol. vol. 111, no. 10 , 102108-, Sep. 2017
34. Yi-Hsin Su, Yen Chuang, Chia-You Liu, T. M. Lu, and Jiun-Yun Li, “Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures” , Physical Review Materials , Vol. vol. 1, no. 4 , 044601-, Sep. 2017
35. Pao-Chuan Shih, Wei-Chih Hou, and Jiun-Yun Li, “A U-gate InGaAs/GaAsSb heterojunction TFET of tunneling normal to the gate with separate control over ON- and OFF-state current” , IEEE Electron Device Letters , Vol. vol. 38, no. 12 , 1751-1754, Dec. 2017
36. T. M. Lu, D. Laroche, S. –H. Huang, Y. Chuang, Jiun-Yun Li, and C. W. Liu, “High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential” , Scientific Reports , Vol. 6 , 20967-, Feb. 2016
37. Dingkai Guo, Jiun-Yun Li, Liwei Cheng, Xing Chen, Terry Worchesky, and Fow-Sen Choa, “Widely tunable integrated mid-infrared quantum cascade lasers using super-structure grating reflectors” , Photonics , Vol. vol. 3, no. 2 , 25-, May 2016
38. D. Laroche, S. –H. Huang, Y. Chuang, C. W. Liu, Jiun-Yun Li, and T. M. Lu, “Magneto-transport analysis of an ultra-low density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure” , Applied Physics Letters , Vol. vol. 108, no. 23 , 233504-, Jun. 2016
39. D. Laroche, S. –H. Huang, E. Nielsen, Y. Chuang, Jiun-Yun Li, C. W. Liu, and T. M. Lu, “Scattering mechanism in shallow undoped Si/SiGe quantum wells” , AIP Advances , Vol. 5 , 107106-, Oct. 2015
40. D. Laroche, S. –H. Huang, E. Nielsen, C. W. Liu, Jiun-Yun Li, and T. M. Lu, “Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure” , Applied Physics Letters , Vol. 106 , 143503-, Apr. 2015
41. C. T. Huang, Jiun-Yun Li, K. S. Chou, and J. C. Sturm, “Screening of remote charge scattering sites from the oxide/silicon interface of strained two-dimensional electron gases by an intermediate tunable shielding electron layer” , Applied Physics Letters , Vol. vol. 104, no. 24 , 243510-, Jun. 2014
42. Jiun-Yun Li, C. T. Huang, L. P. Rokhinson, and J. C. Sturm, “Extremely high electron mobility in isotopically enriched 28Si quantum wells grown by chemical vapor deposition” , Applied Physics Letters , Vol. 103 , 162105-, Oct. 2013
43. Jiun-Yun Li and J. C. Sturm, “The effects of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases” , IEEE Transactions on Electron Devices , Vol. vol. 60, no. 8 , pp. 2479 - 2484-, Jul. 2013
44. C. T. Huang, Jiun-Yun Li, and J. C. Sturm, “Implant isolation of silicon two-dimensional electron gases at 4.2 K” , IEEE Electron Device Letters , Vol. vol. 34 , pp. 21 - 23-, Jan. 2013
45. Jiun-Yun Li, C. T. Huang, and J. C. Sturm, “The effect of hydrogen on the surface segregation of phosphorus in epitaxially-grown relaxed SiGe by RTCVD” , Applied Physics Letters , Vol. vol. 101 , p. 142112-, Oct. 2012
Books:
1. 錢宣浩、王晉中、葉彥宏、李峻霣, “控制系統原理與設計” , 美商國際麥格羅—希爾 , 9574939049 , 台灣, Jan. 2004
2. 李峻霣, “近代物理精要” , 美商國際麥格羅—希爾 , 9574937755 , 台灣, Jan. 2003
3. 李峻霣, “類比CMOS積體電路設計” , 美商國際麥格羅—希爾 , 9574935922 , 台灣, Jan. 2002